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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Desynchronization of Pulsed Driving in the Formation of Soliton Kerr Frequency Combs
摘要： MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRèME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. Extensive discussion and references are provided that illustrate the validation of models used to implement specific simulations of relevant physical processes. Several applications of MRED are summarized that demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices. These include effects from single particle radiation (including both direct ionization and indirect ionization effects), dose enhancement effects, and displacement damage effects. MRED simulations have also helped to identify new single event upset mechanisms not previously observed by experiment, but since confirmed, including upsets due to muons and energetic electrons.
关键词： single event upset,single event effects,total ionizing dose,radiation effects,Displacement damage,Monte Carlo,radiation transport,MRED
更新于2025-09-23 15:21:01
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Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location
摘要： We have investigated the displacement damage (DD) effect on the electrical characteristics of ZnO thin film transistors (TFTs) based on its location of origin in the device structure. The area subjected to the maximum proton dose induces a maximum DD effect in that particular location. ZnO TFTs with two different passivation layer thicknesses were prepared to obtain maximum proton dose distribution in either the ZnO channel layer or ZnO/SiO2 interface. The devices were irradiated by a proton beam with an energy 200 keV and 1 × 1014 protons/cm2 fluence. Transport of Ions in Matter (TRIM) simulation, followed by calculation of depth distribution of the nonionizing energy loss (NIEL), illustrated different proton dose distribution profiles and NIEL profiles along the depth of the device for these two types of samples. The sample with the maximum proton dose peaks at the ZnO/SiO2 interface exhibited a significant degradation in device electrical characteristics as compared to the negligible degradation of the sample when the maximum proton dose was absorbed in the ZnO layer. Therefore, the investigation into the radiation hardness of proton-irradiated ZnO TFTs is non-trivial since the displacement damage induces drastic changes on the device characteristics based on the damage location.
关键词： ZnO,NIEL,Displacement damage,Thin-film transistors,Proton radiation effects
更新于2025-09-23 15:21:01
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Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage
摘要： The effects of 14-MeV neutron displacement damage (DD) on waveguide-integrated germanium-on-silicon p-i-n photodiodes (PDs) for silicon photonics have been investigated up to fluences of 7.5×1012 n/cm2 (14 MeV), or 1.4×1013 n1-MeVeq /cm2(Si). The study includes measurements of dark current-voltage characteristics across temperature from 150-375 K, measurements of PD junction capacitance, spectral response measurements from 1260 nm to 1360 nm, and frequency response measurements. The devices are found to be susceptible to DD-induced carrier removal effects; however, they also continue to operate without meaningful impact to performance for the DD dose levels examined. Since the PD test chips include silicon photonic integrated grating couplers and waveguides which carry the optical signal to the PD, some assessment of the impact of DD on these passive devices can also be inferred. This work does not examine the short-term annealing or transient behavior of the DD, and instead has only considered the lasting damage that remains after any initial period of room temperature annealing.
关键词： displacement damage,photonics,Radiation effects,neutron radiation,photodiodes,optoelectronic devices
更新于2025-09-12 10:27:22
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Impact of Proton and Electron Irradiation-Induced Defects on the Dark Current of GaAs Solar Cells
摘要： The same amount of non-ionizing energy is deposited in GaAs solar cells through 1 MeV proton and electron radiation at specific fluence values. The defects created are detected and characterized via temperature-dependent dark I–V analysis, and the energy levels are correlated to trap states observed via admittance spectroscopy. A remarkable difference is observed between the defect energy levels introduced in the proton and electron cases: in the former, the recombination centers lie around the mid-gap position, while in the latter they are spread over a wider energy range in the band-gap. This induces a profound difference in the degradation of the recombination current in the space-charge region. On the other hand, the degradation of the diffusion current in the neutral regions is found to be determined by the recombination velocities at the back and front hetero-interfaces of the solar cell. They depend only on the displacement damage dose and are independent of the particle type.
关键词： recombination current,semiconductor device modeling,surface recombination,Displacement damage,irradiation-induced defect,GaAs solar cell
更新于2025-09-12 10:27:22
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Dose and Single Event Effects on a Color CMOS Camera for Space Exploration
摘要： This paper focuses on the radiation-induced dose and single event effects on a color CMOS camera designed for space missions. Gamma-ray and protons are used to evaluate the tolerance against cumulative dose effects. The dark current of the image sensor is the main parameter impacted by dose effects. Heavy ions testing is performed to evaluate single event effects. SEU, SEFI and SEL have been observed and mitigation techniques were proposed for specific space missions.
关键词： Total Ionizing Dose (TID),Microlens,CMOS Image Sensor (CIS),Single Event Effects (SEE),Displacement Damage Dose (DDD),Pinned Photodiode (PPD),Active Pixel Sensor (APS),Monolithic Active Pixel Sensor (MAPS),Camera,Color filter,Random Telegraph Signal (RTS)
更新于2025-09-04 15:30:14