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oe1(光电查) - 科学论文

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  • Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic On-Resistance in GaN HEMTs

    摘要： The dynamic on-resistance is problematic as it can impair the converter's efficiency due to the increased conduction loss. In this paper, the hard-switching transient's effect on the dynamic on-resistance is, for the first time, evaluated experimentally on a commercial high-voltage GaN HEMT. A new R_dyn-ds,on measurement circuit with fast sensing speed is designed, and an accurate measurement of R_dyn-ds,on can be realized experimentally within 49.6 ns after the device's current reaches to the load current. A double-pulse-test setup is designed to comprehensively evaluate the switching transient's effect on R_dyn-ds,on under different operating conditions. From the experimental results, it is found that the turn-on and turn-off gate resistance have a significant impact on the dynamic on-resistance whereas the cross-talk effect on R_dyn-ds,on is negligible. Specifically, at 400 V/25 A, more than 27% (28.2%) increase in R_dyn-ds,on is observed when the external turn-on (turn-off) gate resistance increases from 0 Ω to 20 Ω. Detailed discussion and quantitative analysis are provided to explain the experimental results. In terms of the turn-on process, it is concluded that the R_dyn-ds,on variation is mainly caused by the different numbers of generated hot electrons. For the turn-off transient, it is confirmed the variation of drain current at different dv/dt slew rate leads to the R_dyn-ds,on difference.

    关键词： switching transients,Dynamic on-resistance,GaN HEMTs,hot electrons

    更新于2025-09-23 15:22:29

  • The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

    摘要： Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 1013 cm?2, the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.

    关键词： high-electron-mobility transistor (HEMT),proton irradiation,Gallium nitride (GaN),dynamic ON-resistance

    更新于2025-09-09 09:28:46