研究目的
Investigating the effect of proton irradiation on suppressing dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors.
研究成果
Proton irradiation of AlGaN/GaN HEMTs leads to suppression of dynamic RON up to 600 V without altering the threshold voltage for fluences up to 1.5 × 1014cm?2. The increased conductivity of the GaN UID layer prevents the negative ionization of CN acceptors, resulting in no dynamic RON. These observations are confirmed on large power devices, showing the effect of both the OFF-state drain leakage current and the dynamic RON in the vicinity of the proton impact zone.
研究不足
The study focuses on proton fluences below 1015 cm?2 due to observed threshold voltage shifts and static ON-resistance doubling at higher fluences. The semiconductor lattice damage caused by irradiation is not taken into account in the simulations.
1：Experimental Design and Method Selection:
The study involves characterizing both small and large power transistors before and after 3-MeV proton irradiation at different fluences.
2：Sample Selection and Data Sources:
The devices used are 6-in metal–organic chemical vapor deposition grown 650-V rated GaN-on-Si power transistors.
3：List of Experimental Equipment and Materials:
The devices are irradiated by a proton beam with a kinetic energy of 3 MeV, and the beam intensity is measured by a Faraday cup.
4：Experimental Procedures and Operational Workflow:
The devices are characterized in terms of dc, transient and dynamic performance before and after irradiation.
5：Data Analysis Methods:
The impact of proton irradiation on the dynamic ON-resistance is analyzed using pulsed IV measurements and drain current transient analysis.
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