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Microstructure and properties of high strength and high conductivity Cu-Cr alloy components fabricated by high power selective laser melting
摘要： Although different kinds of metal materials have been built in the past years, it is difficult to fabricate the components of copper alloys with high strength and high conductivity due to their high reflectivity and thermal conductivity. In this paper, Cu-Cr alloy with high strength and high conductivity was successfully manufactured by high laser power selective laser melting. The microstructure, mechanical properties and conductivity were studied and compared before and after the heat treatment. The microstructure of the as-built sample was columnar grains with very fine cellular sub-structures and precipitates of Cr and Cr2O3. After heat treatment, the Cr particles precipitated from Cu matrix, resulting in simultaneous increase in strength and conductivity. The ultimate tensile strength of 468 MPa, yield strength of 377.33 MPa, and electrical conductivity of 98.31% IACS were achieved, which is even better than the samples fabricated by rolling with post heat treatment.
关键词： Cu-Cr alloy,Electronic conductivity,Laser processing,Microstructure,Mechanical properties
更新于2025-11-28 14:24:20
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A supramolecular Cd( <scp>ii</scp> )-metallogel: an efficient semiconductive electronic device
摘要： A sonication-based strategy for the synthesis of a functional supramolecular Cd(II)-metallogel (CdA-OX) has been achieved through mixing cadmium(II) acetate dihydrate and oxalic acid dihydrate, a low molecular weight gelator (LMWG), in N,N-dimethyl formamide solvent at room temperature under atmospheric pressure. The mechanical properties of the supramolecular Cd(II)-metallogel were investigated through a rheological study. The pebble-like self-assembly hierarchical architecture of the supramolecular metallohydrogel was visualized through field emission scanning electron microscopy investigations. The electrical properties of the metallogel were thoroughly examined and indicate its semiconducting nature. Based on its conducting properties, the Cd(II)-metallogel was successfully applied to a Schottky barrier diode. Overall, this work is a novel instance of technologically challenging electronic device application of a Cd(II)-metallogel.
关键词： Schottky barrier diode,supramolecular Cd(II)-metallogel,sonication-based synthesis,electronic device,semiconducting nature
更新于2025-11-21 11:18:25
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Ternary photocatalyst based on conducting polymer doped functionalized multiwall carbon nanotubes decorated with nanorods of metal oxide
摘要： The ternary photocatalyst PEDOT@ZnO@MWCNTs was fabricated using chemical oxidative method of polymerization. The fabrication of the catalyst was further investigated using spectroscopic techniques namely UV–Visible, FT-IR, XRD and the surface morphology was explored by SEM and TEM. The photodegradation kinetics of the azo dye MO followed pseudo first order kinetics at different pH. The photodegradation of the dye was studied in presence of PEDOT@ZnO@MWCNTs on irradiation with visible source of light. The redox activity of the photocatalyst was investigated by cyclic voltammetric technique and the mechanism of the photocatalysis was established via electronic impedance study. The evaluated value of rate constant, half life time period and the degradation efficiency sustenance the competence of the photocatalyst for the photodegradation of MO at the optimum pH value of 3.5. The chemical oxygen demand (COD) analysis was also favored the mineralization of the dye in presence of photocatalyst.
关键词： Photocatalyst,Methyl orange,Kinetics,Photodegradation,Electronic impedance study
更新于2025-11-21 11:18:25
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One-step growth of reduced graphene oxide on arbitrary substrates
摘要： Reduced graphene oxide (rGO) has inherited the outstanding electronic, optical, thermal and mechanical properties of graphene to a large extent, while maintaining sufficient chemically active sites. Therefore, it has attracted a great deal of research attention in the fields of energy storage, electronics, photonics, catalysis, environmental engineering, etc. Currently, the most popular way to prepare rGO is to reduce graphene oxide, which is obtained by modified Hummer methods using tedious treatments in a harsh environment, to rGO flakes. Industrial applications demand advanced preparation methods that can mass produce highly uniform rGO sheets on arbitrary substrates. In this work, a one-step growth process is introduced that utilizes cellulose acetate as a precursor, without any catalysts, to produce uniform ultrathin rGO films on various substrates and free-standing rGO powders. Systematic spectroscopic and microscopic studies on the resulting rGO are performed. Prototypes of electronic and optoelectronic devices, such as field effect transistors (FETs), photodetectors, and humidity sensors, are fabricated and tested, demonstrating the intriguing applications of our rGO materials across a wide range of fields.
关键词： electronic devices,reduced graphene oxide,one-step growth,cellulose acetate,optoelectronic devices
更新于2025-11-21 11:03:25
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Latent tracks and novel infrared waveguide formation in lithium tantalate irradiated with swift heavy ions
摘要： In this work, the formation mechanisms of latent ion tracks and infrared-light waveguides in ion-irradiated LiTaO3 single crystals were comparatively studied using 200 MeV Kr17+ irradiation at a fluence of 1 × 1012 cm?2 and 247 MeV Ar12+ irradiation at fluences of 1 × 1012 cm?2 and 3 × 1012 cm?2. Because of the intense electronic energy loss, the produced lattice disorder and formed latent track were experimentally determined through complementary techniques, including the analysis of transmission electron microscopy patterns and Rutherford backscattering/channeling spectra. Corresponding to different ions with different irradiation energies and electronic energy losses, the related spatio-temporal evolutions of lattice temperatures in Kr17+- and Ar12+-irradiated LiTaO3 crystals were numerically calculated using the inelastic thermal spike model. The simulation results theoretically describe the experimentally observed lattice disorder and latent track behaviors. The lattice swelling in the latent-ion-track regions was demonstrated using high-resolution x-ray diffraction patterns; the lattice swelling resulted in a decrease in the refractive index, thereby providing a path to tailor the optical properties and fabricate the waveguide structure. Optical measurements and simulations indicated that the formed LiTaO3 waveguide could effectively support the guided modes and confine the light propagation, especially in the infrared region.
关键词： swift heavy ion irradiation,latent ion track,electronic energy loss,infrared waveguide
更新于2025-11-14 17:04:02
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Electronic transport in MoSe <sub/>2</sub> FETs modified by latent tracks created by swift heavy ion irradiation
摘要： Unique characteristics of transition metal dichalcogenides (TMDCs) such as their tunable band gap and ultra-thin body thickness make them potential candidates for applications in optoelectronic, gas sensing and energy storage devices. In this work, 1.8 GeV Ta ions at different ion fluences ranging from 1 × 109 ions cm?2 to 6 × 1010 ions cm?2 were used to introduce amorphous defective regions, latent tracks, in MoSe2 to study the electronic transport behavior in irradiated TMDC-channel field-effect transistors (FETs). Defects in these materials induced by the swift heavy ion irradiation play a vital role in the device applications. The results show that carrier mobility decreases while resistance of the devices increases abruptly with increasing ion fluences. The impact mechanism of the latent tracks on electronic transport behavior in TMDC-channel FETs was analyzed in detail. It was assumed that the Bloch wave of electrons was strongly localized by the latent tracks induced by the SHI irradiation and the Bloch wave of electrons can be scattered by the latent tracks as well. This study helps to investigate the influence of the latent tracks on electronic transport in other 2D materials as well.
关键词： latent track,field-effect transistor,molybdenum selenide,electronic transportation,swift heavy ion irradiation
更新于2025-11-14 17:03:37
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Effects of Perpendicular Aryl Groups on Electronic Properties and Complexation of 4,4-Dihydrodithienosilole
摘要： 4,4-Dihydrodithienosilole bearing perpendicular Tip groups at the 3,5-positions (1) was synthesized. Compound 1 was characterized by NMR, IR, and mass spectroscopy and X-ray crystallography. The lowest energy absorption band in the UV/Vis spectrum is shifted bathochromically compared with the parent 4,4-dihydrodithienosilole II. The fluorescence quantum yield of 1 is much higher than that of II. The oxidative addition of 1 to Pt(PPh3)2(C2H4) gave the isolable silylplatinum hydride complex 7 in contrast to II and a related compound. These results indicate that the Tip groups affect the electronic properties and complexation.
关键词： Perpendicular aryl group,Electronic effect,Dithienosilole
更新于2025-11-14 14:48:53
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Dynamically Switching the Electronic and Electrostatic Properties of Indium Tin Oxide Electrodes with Photochromic Monolayers: Toward Photo-Switchable Optoelectronic Devices
摘要： The chemical modification of electrodes with organic materials is a common approach to tune the electronic and electrostatic landscape between interlayers in optoelectronic devices, thus facilitating charge injection at the electrode/semiconductor interfaces and improving their performance. The use of photochromic molecules for the surface modification allows dynamic control of the electronic and electrostatic properties of the electrode and thereby enables additional functionalities in such devices. Here, we show that the electronic properties of a transparent indium tin oxide (ITO) electrode are reversibly and dynamically modified by depositing organic photochromic switches (diarylethenes) in the form of self-assembled monolayers (SAMs). By combining a range of surface characterization and density functional theory calculations, we present a detailed picture of the SAM binding onto ITO, the packing density of molecules, their orientation, as well as the work function modification of the ITO surface due to the SAM deposition. Upon illumination with ultraviolet and green light, we observe a reversible shift of the frontier occupied levels by 0.7 eV, and concomitantly a reversible work function change of ca. 60 meV. Our results prove the viability of dynamic switching of the electronic properties of the electrode with external light stimuli upon modification with a monolayer of photochromic molecules, which could be used to fabricate ITO-based photo-switchable optoelectronic devices.
关键词： self-assembled monolayer,diarylethene,ITO,photochromic switch,interface electronic properties
更新于2025-11-14 14:32:36
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X-ray imaging demonstration of glass GEM detector with dynamic time-over-threshold-based readout
摘要： Large-scale detection is one of the important roles for gaseous detectors to play in high-energy physics. In many cases, energy resolving multi-channel readout is required. Recent micro-pattern gaseous detectors (MPGDs) have finer pitches or pixels; hence, large-sized detectors have thousands of readout channels. In those cases, it becomes important to reduce the scale and complexity of the readout circuit while keeping its energy resolving capability. The signal processing technique called dynamic time-over-threshold (dynamic ToT, dToT) achieves both the good conversion linearity from analog to digital signal and the compact circuit scale compared with conventional analog-to-digital-converter (ADC)-based readout. In this study, we developed and demonstrated a dToT-based readout circuit for glass gas electron multiplier (glass GEM, G-GEM). The readout circuit showed better linearity than that of normal ToT. We demonstrated the readout circuit by X-ray imaging with the charge-division scheme. The good linearity of the readout circuit enabled imaging over a 100 × 100 mm2 area with small distortion. We expect that the dToT-based readout would be a promising candidate for the future readout of large-scaled MPGDs.
关键词： Digital electronic circuits,Electronic detector readout concepts (gas, liquid),Analogue electronic circuits,Micropattern gaseous detectors (MSGC, GEM, THGEM, RETHGEM, MHSP, MICROPIC, MICROMEGAS, InGrid, etc)
更新于2025-09-23 15:23:52
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Experimental performance of a highly-innovative low-noise charge-sensitive preamplifier with integrated range-booster
摘要： Integrated charge-sensitive preamplifiers suffer from a reduced available dynamic range respect to discrete-type equivalents. This is due to the limits on maximum supply voltages that modern scaled technologies can tolerate. In this work we present a low-noise low-power integrated charge-sensitive preamplifier (CSP) for solid-state detectors. This device is equipped with an integrated range-booster that can enhance the spectroscopic range of the preamplifier by more than one order of magnitude, enabling high-resolution spectroscopy even if the preamplifier is in deep saturation condition. If the input signals from the detector are under the natural saturation threshold (40 MeV), the preamplifier works in an usual linear way, producing at the output the typical exponential signals. With proper filtering a resolution of approximately 1 keV is achievable. When a large signal from the detector saturates the preamplifier, a sensing circuit detects the saturation and switches the operation mode of the CSP to the “fast-reset mode”. In this mode a constant and controlled current generator discharges the input node of the preamplifier until the normal operating point is reached. Meanwhile an auxiliary circuit similar to a TAC (Time-to-Amplitude converter) retrieves the energy of the signal that caused saturation. Although the natural dynamic range of the CSP is 40 MeV, the fast-reset mode enables for high-resolution spectroscopy (under 0.2% FWHM) up to several hundreds of MeV (700 MeV typically). One issue in this kind of circuits is the dependence of the energy measured with the TAC circuit on the baseline value of the CSP before the “fast-reset event” [5]. As a solution to this problem we propose a correction algorithm implemented inside the TAC block in the form of an analog circuit. On a test-bench a series of large 3 pC charge signals is injected in the input node of the preamplifier through a test capacitor. Before these events, residual charges ranging from 0 to 0.56 pC produce non-zero baseline voltages at the output of the CSP. The TAC with correction not only retrieves correctly the energy of the main event, but also rejects the baseline voltages, leaving the energy measurement unaffected. The fluctuations of the flat-top voltage in the signals produced by the auxiliary TAC circuit due to the different baseline voltages are under the 0.6% of the total signal amplitude.
关键词： Front-end electronics for detector readout,VLSI circuits,Analogue electronic circuits,Electronic detector readout concepts (solid-state)
更新于2025-09-23 15:23:52