- 标题
- 摘要
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- 实验方案
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Continuous-wave operation of a 1.3 <i>??</i> m wavelength npn AlGaInAs/InP transistor laser up to 90 ?°C
摘要： A transistor laser (TL) is a device that operates at a high-speed with multiple functions such as output control with low wavelength shift and signal mixing. By adopting a high heat dissipation structure with a high-speed compatible wide electrode pad and thick Au plating in TLs, improvement of temperature performance in 1.3 μm wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3 μm TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W?1, based on the spectrum behavior, which is at least four times lower than the previously observed value.
关键词： transistor laser,AlGaInAs/InP,continuous-wave operation,thermal resistance,high heat dissipation structure
更新于2025-09-23 15:21:01
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Infrared Cameras in Electronics Development
摘要： There has been a distinct trend in electronics development in the last few years: Packing density is increasing. Today, modern smartphones are much more powerful than they were only a few years ago, yet they are no bigger. The same applies to IT devices, automobile electronics, and consumer electronics. Accordingly, problems caused by heating must be looked out for with great care. Modern infrared measurement technology is an important aid in this regard.
关键词： electronics development,heat dissipation,Infrared cameras,semiconductor devices,temperature measurement,power loss
更新于2025-09-23 15:21:01
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Prominent Heat Dissipation in Perovskite Light-Emitting Diodes with Reduced Efficiency Droop for Silicon-Based Display
摘要： Solution-processed perovskite light-emitting diodes (LEDs) possess outstanding optoelectronic properties for potential solid-state display applications. However, poor device stability results in significant efficiency droop partly being ascribed to Joule heating when LEDs are operated at high current densities. Herein, we used monocrystal silicon (c-Si) as substrate and charge injection layer to alleviate the thermal affection in perovskite LED (PeLED). By incorporating silicon oxide (SiOx) and poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4’-(N-(4-butylphenyl) (TFB) layer to tune the charge injection balance in c-Si-based device, a PeLED achieves an external quantum efficiency of 2.12% with a current efficiency of 6.06 cd A-1. Benefiting from excellent heat dissipation of c-Si, the PeLEDs display reduced efficiency droop and extended operational lifetime. Furthermore, both electroluminescent (EL) dynamic information display and static pattern displays of c-Si-based PeLED have been successfully demonstrated. These results reveal the feasibility of potential practical c-Si-based PeLEDs with reduced efficiency droop for EL display applications.
关键词： efficiency droop,silicon substrate,perovskite light-emitting diode,display application,heat dissipation
更新于2025-09-23 15:19:57
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Study on Nitrogen-Doped Graphene Ink and Its Effects on the Heat Dissipation for the LED Lamps
摘要： This study explored the application of nitrogen-doped graphene (NDG) ink to the coating of light-emitting diode (LED) lamps for the thermal management. Unlike the general solutions of graphene, the NDG ink used in this study was tuned with high electrical resistance and quietly suitable for the application of the LED lamp coating, which prevented the short circuit problem; besides, the NDG ink also provided a high heat dissipation effect to improve the performance of the LED lamp. The investigation of adhesion and resistance for the NDG ink were conducted by the cross-cut test and the four-point probe resistance measurement, respectively. Three types of LED lamps including the original lamp, fin-removed lamp, and NDG-ink coated (NGC) lamp were tested for the actual operating temperature distribution by K-type thermal couples and for the lumens by the integrating sphere. The results showed that the heat dissipation of the NGC lamp was better than that of the original lamp. In addition, the inspections for the properties of NDG powder were also performed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and Raman spectroscopy. According to the inspectional results, the NDG powder had a percentage of nitrogen of about 3.8% by XPS, a surface roughness Rq of 0.9 nm by AFM, and over ten layers by Raman analysis. It showed that the NDG powder in this study belonged to the type of multi-layer graphene.
关键词： integrating sphere,heat dissipation,nitrogen-doped graphene,LED
更新于2025-09-23 15:19:57
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Thermal analysis and heat dissipation improvement for quantum cascade lasers through experiments, simulations, and structure function
摘要： We quantified the thermal resistance of quantum cascade lasers (QCLs) using their structure functions and increased the laser output by employing ridge structures in which thermal resistance was reduced. To improve heat properties, three different QCL devices were prepared as follows. One was a device whose ridge was covered with SiO2, another was a device whose ridge was embedded with Au, and the other was a device whose ridge was embedded with Cu. The temperature distributions were measured with a thermoviewer and were analyzed with three-dimensional simulations. From the results, improved heat dissipation by embedding the ridge was clarified. Furthermore, the structure functions obtained by static mode measurement suggested that the thermal resistance was improved from 9.3 to 6.5 K W?1 by embedding the ridge. As a result of the improvement, the QCL with the Au-embedded ridge had a 1.5-fold higher laser power than the QCL with the SiO2-covered ridge.
关键词： thermal resistance,laser output,heat dissipation,structure function,quantum cascade lasers
更新于2025-09-19 17:13:59
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Study on Temperature Rise Characteristic of LED Lighting Fixture under Different Conditions
摘要： The temperature rise characteristic of LED lighting fixture under different conditions was studied in the paper. The experimental results showed that the temperature rise of LED lighting fixture under the condition of with cover and no dust was about 1.5 times higher than that of LED lighting fixture under the condition of no cover and with dust. Apparently, the influence of the cover on the heat dissipation of LED lighting fixture was much larger than the dust.
关键词： Cover,Thermal Resistance,Temperature Rise,Heat Dissipation,LED lighting fixture,Dust
更新于2025-09-16 10:30:52