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Highly Stretchable, High‐Mobility, Free‐Standing All‐Organic Transistors Modulated by Solid‐State Elastomer Electrolytes
摘要： Highly stretchable, high-mobility, and free-standing coplanar-type all-organic transistors based on deformable solid-state elastomer electrolytes are demonstrated using ionic thermoplastic polyurethane (i-TPU), thereby showing high reliability under mechanical stimuli as well as low-voltage operation. Unlike conventional ionic dielectrics, the i-TPU electrolyte prepared herein has remarkable characteristics, i.e., a large specific capacitance of 5.5 μF cm?2, despite the low weight ratio (20 wt%) of the ionic liquid, high transparency, and even stretchability. These i-TPU-based organic transistors exhibit a mobility as high as 7.9 cm2 V?1 s?1, high bendability (Rc, radius of curvature: 7.2 mm), and good stretchability (60% tensile strain). Moreover, they are suitable for low-voltage operation (VDS = ?1.0 V, VGS = ?2.5 V). In addition, the electrical characteristics such as mobility, on-current, and threshold voltage are maintained even in the concave and convex bending state (bending tensile strain of ≈3.4%), respectively. Finally, free-standing, fully stretchable, and semi-transparent coplanar-type all-organic transistors can be fabricated by introducing a poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid layer as source/drain and gate electrodes, thus achieving low-voltage operation (VDS = ?1.5 V, VGS = ?2.5 V) and an even higher mobility of up to 17.8 cm2 V?1 s?1. Moreover, these devices withstand stretching up to 80% tensile strain.
关键词： free-standing all-organic transistors,stretchable and conformal electronics,high-mobility,elastomer electrolyte,low-voltage operation
更新于2025-11-14 17:28:48
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High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric
摘要： In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.
关键词： metal-oxide semiconductors,thin-film transistors,high-k dielectric,high mobility,inkjet printing
更新于2025-11-14 15:19:41
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In Situ Monitoring of Thermal Degradation of CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> Films by Spectroscopic Ellipsometry
摘要： High mobility group A2 (HMGA2) is an architectural transcription factor that promotes human colorectal cancer (CRC) aggressiveness by modulating the transcription of target genes. The degradation of p53 is mediated by murine double minute 2 (MDM2) in a proteasome-dependent manner. Here we report that HMGA2 promotes cell cycle progression and inhibits apoptosis in CRC cells in vitro. We also developed an intestinal epithelial cell-specific Hmga2 knock-in (KI) mouse model. It revealed that the Hmga2 KI promoted chemical carcinogen-induced tumorigenesis in the intestine in vivo. In studying the underlying molecular mechanism, we found that HMGA2 formed a protein complex with p53. The tetramerization domain of p53 (amino acids 294–393) and the three AT-hook domains (amino acids 1–83) of HMGA2 were responsible for their direct interaction. We also found that HMGA2 directly bound to MDM2 and the central acidic and zinc finger domains of MDM2 (amino acids 111–360) were required for interaction with HMGA2. Furthermore, our results indicated that HMGA2 promoted MDM2-mediated p53 ubiquitination and degradation. Interestingly, Hmga2 overexpression in Hmga2 KI mice resulted in an increase in the accumulation of ubiquitinated p53. In addition, in two large CRC cohorts, it was demonstrated that high HMGA2 expression was predictive of an adverse outcome in the p53-negative subgroup of CRC patients. In summary, our data have established for the first time a novel mechanism by which HMGA2 functions with p53 and MDM2 to promote CRC progression.
关键词： high mobility group AT-hook 2,colorectal cancer,p53
更新于2025-09-23 15:23:52
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HMGB1 siRNA can reduce damage to retinal cells induced by high glucose in vitro and in vivo
摘要： Background: Diabetic retinopathy (DR), one of the most common complications of late-phase diabetes, is associated with many risk factors, among which continuous low-grade inflammation is one of the principal ones. As such, lowering inflammation levels and maintain the viability of human retinal endothelial cells (HRECs) are critical for DR therapy. HMGB1 is a well-known proinflammatory cytokine. However, whether HMGB1 small interfering RNA (siRNA) can protect retina cells under a high-glucose environment from morphological changes and functional abnormalities remain undetermined. We aimed to investigate the effect of HMGB1 siRNA on retinal cells in DR. Materials and methods: A total of 80 adult Wistar rats were randomly divided into four groups (n=20 each): normal control, diabetes mellitus (DM), scrambled (Scr) siRNA, and HMGB1 siRNA. Rats in the DM, Scr siRNA, and siRNA groups were established by intraperitoneal injection of streptozotocin. At 16 weeks after injection, rats in the siRNA and Scr-siRNA groups were intravitreally injected with 2 μL HMGB1 siRNA and 2 μL Scr-siRNA, while rats in the control and DM groups were intravitreally injected with the same dose of sterile saline. At 1 week after injections, we performed the following experiments. Immunohistochemical staining and real-time quantitative polymerase chain reaction were performed to test HMGB1 protein and messenger RNA expression in retinas. We performed TUNEL assays to detect retinal cell apoptosis and electroretinography to detect retinal function. In HRECs treated with high glucose, proliferation, morphology, apoptosis, superoxide dismutase (SOD), and reactive oxygen species production were detected. Western blot was applied to determine the expressions of HMGB1 and its related protein and apoptosis protein. Results: Intravitreal injection of HMGB1 siRNA reduced protein and messenger RNA expression of HMGB1 (both P,0.05). Intravitreal injection of HMGB1 siRNA reduced apoptosis of retinal cells (P,0.05), protected morphological changes in the retina, and improved the function of the retina (P,0.05). In HRECs treated with high glucose, HMGB1 siRNA pretreatment increased cell viability, reduced cell apoptosis, and reduced oxidative damage to cells (all P,0.05). Western blot detection found that HMGB1 siRNA pretreatment can inhibit the expression of cleaved caspase 3 and improve the expression of BCL2 (P,0.05). HMGB1 and NFκB expression increased in a time-dependent manner in the high-glucose environment and IKKβ and NFκB protein expression decreased significantly after HMGB1 silencing. Conclusion: As a therapeutic target, HMGB1 siRNA can reduce retinal cell damage induced by high glucose in vitro and in vivo and delay DR progress through the HMGB1–IKKβ–NFκB signaling pathway.
关键词： small interfering RNA,diabetic retinopathy,human retinal endothelial cells,inhibitor of nuclear factor κB,nuclear factor κB,high-mobility group box 1
更新于2025-09-23 15:22:29
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Crystallisation Phenomena of In2O3:H Films
摘要： The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infrared spectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O?? and (OH?)O? point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.
关键词： high mobility,In2O3:H,thin films,TCO,crystallisation
更新于2025-09-23 15:22:29
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Two-dimensional Kagome Lattices Made of Hetero Triangulenes are Dirac Semimetals or Single-Band Semiconductors
摘要： Here we discuss, based on first-principles calculations, two-dimensional (2D) kagome lattices composed of polymerized hetero-triangulene units, planar molecules with D3h point group containing a B, C or N center atom and CH2, O or CO bridges. We explore the design principles for a functional lattice made of 2D polymers, which involves control of π-conjugation and electronic structure of the knots. The former is achieved by the chemical potential of the bridge groups, while the latter is controlled by the heteroatom. The resulting 2D kagome polymers have a characteristic electronic structure with a Dirac band sandwiched by two flat bands and are either Dirac semimetals (C center), or single-band semiconductors - materials with either exclusively electrons (B center) or holes (N center) as charge carriers of very high mobility, reaching values of up to ~8×103 cm2V-1s-1, which is comparable to crystalline silicon.
关键词： high mobility,charge carriers,single-band semiconductors,hetero-triangulene units,Dirac semimetals,two-dimensional kagome lattices
更新于2025-09-23 15:21:21
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Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications
摘要： F-and-Ga co-doped ZnO films were sputter-deposited on glass substrates by RF magnetron sputtering method. The fabricated films were characterized by different techniques. It was found that all the films were poly-crystalline with a hexagonal wurtzite structure with a c-axis preferred orientation of growth. The effect of the substrate temperature on the surface morphology, electrical and optical properties of the films was also investigated. The optimal growth temperature was found to be 440 oC which led to the optimal film with the resistivity of 6.81 × 10?4 Ωcm, carrier concentration of 2.61 × 1020 cm?3, mobility of 35.1 cm2/V, over-90% transmittance in the region of 400–1200 nm and a wide optical bandgap of 3.49 eV. This optimal film was employed in as the front contact in perovskite solar cells and resulted in a high power-conversion efficiency of 15.32%. This indicates that such a film can be promisingly useful for high-performance thin-film solar cells.
关键词： High mobility,Thin-film solar cells,F-and-Ga co-doped ZnO films,Magnetron sputtering
更新于2025-09-23 15:19:57
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[IEEE 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) - Shenzhen, China (2018.11.16-2018.11.18)] 2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) - High mobility metal-oxide thin film transistors with IGZO/In<inf>2</inf>O<inf>3</inf> dual-channel structure
摘要： High-performance Self-aligned top-gate thin film transistors with dual-channel have been successfully fabricated on glass substrate. The dual-layer channel is composed of In2O3 and IGZO layers. The introduction of the In2O3 thin layer greatly improves the electrical characteristics of the self-aligned top-gate thin film transistors. In comparison, the dual-channel TFT shows higher filed-effect mobility (34.3cm2/Vs) than single-layer a-IGZO TFT (10.2cm2/Vs). Apart from that we obtain an on/off current ratio of 106, a steep subthreshold swing voltage of 0.44V/decade and a threshold voltage of -3.35V. This enhancement can be attributed to the In2O3 thin layer which offers a higher carrier concentration, thereby maximizing the charge accumulation, generating high carrier mobility and turning the threshold voltage negative.
关键词： Self-aligned top-gate TFT,IGZO,uniformity,high mobility,threshold voltage,In2O3
更新于2025-09-19 17:15:36
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[IEEE 2019 SBFoton International Optics and Photonics Conference (SBFoton IOPC) - Sao Paulo, Brazil (2019.10.7-2019.10.9)] 2019 SBFoton International Optics and Photonics Conference (SBFoton IOPC) - A Pedestal Waveguide Coupler for Mode Division Multiplexing
摘要： Providing reliable broadband wireless communications in high mobility environments, such as high-speed railway systems, remains one of the main challenges faced by the development of the next generation wireless systems. This paper provides a systematic review of high mobility communications. We first summarize a list of key challenges and opportunities in high mobility communication systems, then provide comprehensive reviews of techniques that can address these challenges and utilize the unique opportunities. The review covers a wide spectrum of communication operations, including the accurate modeling of high mobility channels, the transceiver structures that can exploit the properties of high mobility environments, the signal processing techniques that can harvest the benefits (e.g., Doppler diversity) and mitigate the impairments (e.g., carrier frequency offset, intercarrier interference, channel estimation errors) in high mobility systems, and the mobility management and network architectures that are designed specifically for high mobility systems. The survey focuses primarily on physical layer operations, which are affected the most by the mobile environment, with some additional discussions on higher layer operations, such as handover management and control-plane/user-plane decoupling, which are essential to high mobility operations. Future research directions on high mobility communications are summarized at the end of this paper.
关键词： High mobility communications,fast time-varying fading,ICI,CFO,Doppler diversity,mobility management
更新于2025-09-19 17:13:59
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Epitaxial growth and characterization of high quality Bi<sub>2</sub>O<sub>2</sub>Se thin films on SrTiO<sub>3</sub> substrates by pulsed laser deposition
摘要： Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three dimensional (3D) island is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm2/V-1s-1 at room temperature in a 70 nm-thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.
关键词： Bi2O2Se,pulsed laser deposition,heterostructure,high mobility,two-dimensional materials
更新于2025-09-16 10:30:52