- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Synergistic Effects of Charge Transport Engineering and Passivation Enabling Efficient Inverted Perovskite Quantum-dot Light-emitting Diodes
摘要： All inorganic perovskite quantum dots (QDs) have attracted much attention in the optoelectronic devices due to their fascinating properties such as high photoluminescence quantum yields (PLQYs), narrow emission peak, and facile synthesis process. Herein, we report a synergistic strategy of interfacial engineering and passivation. We construct an inverted device structure with Zinc Magnesium Oxide (Zn0.95Mg0.05O) as electron transport layer and p-n charge generation junction of (N,N’-Bis(naphthalen-1-yl)- N,N’- bis(phenyl) benzidine/ 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile) as hole transport layer to facilitate and balance the charge injection/transport. Meanwhile, a facile post-passivation technique is employed to passivate the cesium lead bromide (CsPbBr3) QDs via supplement of Br anion. The treated QDs exhibit improve PLQY due to decreased surface defect sites and enhanced radiative recombination. As a result, our perovskite quantum dot light-emitting diodes (PVQDLEDs) obtain a maximum luminance of 75792 cd m-2, an extremely low turn-on voltage of 1.9 V, and a maximum external quantum efficiency (EQE) of 5.95%, leading to an increase in EQE by 100% compared with that of the control device. Our work offers an effective approach to improve the performance of PVQDLEDs via multiple effects for the application of displays and solid-state lighting.
关键词： perovskite quantum dots,inverted device structure,passivation,light-emitting diodes,charge transport engineering
更新于2025-09-19 17:13:59
-
Near-infrared polymer light-emitting diodes based on an inverted device structure
摘要： Near-infrared polymer light-emitting diodes (NIR-PLEDs) possess great potential in applications ranging from night-vision device to optical communications. Here we obtained NIR emission from normal red fluorescent polymers by using an inverted device structure with the aid of micro-cavity effects. By tuning the thickness of the emissive layer, the inverted NIR-PLED based on PPF-FSO15-DHTBT10 and MEH-PPV got a near-infrared emission with the main peak located at 700 nm and 706 nm, and the maximum external quantum efficiency (EQEmax) of 0.54% and 1.03%, respectively. The increase of emissive layer thickness caused the relative variation of recombination area, which led to the widely controlling of EL spectra in the inverted device. These results reveal that tuning EL spectrum utilized by inverted device structure would be a promising method to realize near-infrared emission.
关键词： emissive layer thickness,micro-cavity effects,inverted device structure,Near-infrared polymer light-emitting diodes,external quantum efficiency
更新于2025-09-11 14:15:04