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Enhanced absorption of monolayer molybdenum disulfide (MoS2) using nanostructures with symmetrical cross resonator in the visible ranges
摘要： In order to enhance the absorption of monolayer molybdenum disulfide (MoS2), a novel nanostructure with symmetrical cross resonator based on MoS2 in the visible wavelength ranges has been proposed. At a resonant wavelength of 623 nm, the absorption of monolayer MoS2 in the absorption structure is as high as 82%, much higher than the bare MoS2 in the air. The electric field around monolayer MoS2 is enhanced by the guided mode resonance, thereby enhancing the absorption of monolayer MoS2 in the structure. The relevant parameters of the proposed structure are adjusted to achieve the tunability of the resonant wavelength in the visible ranges and the high-efficiency absorption of monolayer MoS2 in the structure, which is of great significance for the applications of MoS2-based optoelectronic devices.
关键词： Absorption,Monolayer MoS2,Perfect absorption structure,Resonance
更新于2025-09-23 15:23:52
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Topology and polarity of dislocation cores dictate the mechanical strength of monolayer MoS2
摘要： In contrast to homoelemental graphene showing common dislocation dipole with pentagon-heptagon (5|7) core, heteroelemental MoS2 is observed to contain diverse dislocation cores that tune the chemical and physical properties. Yet, how the inevitable dislocation cores in MoS2 affect the mechanical behaviours remains virtually unexplored. Herein, we report direct atomistic simulations of mechanical characteristics of isolated dislocation-embedded MoS2 monolayers under tensile load. All isolated dislocation cores in MoS2 monolayer rise polar stress-concentration, while those with larger Burgers vector are less energetically-favorable configurations but show local wrinkling behaviour. It is revealed that the intrinsic tensile strength of MoS2 is dictated by topology and polarity of dislocation cores. There is a strong inverse correlation between the maximum residual stresses induced by the dislocation cores and the strength of MoS2 monolayers. Mechanical failure initiates from the bond at dislocation polygon on which side there is a missing atomic chain. Armchair-oriented 4|8 dislocation exhibits sole brittle failure, however, dual brittle/ductile fractures occur in zigzag-oriented dislocations; Mo-S-Mo angle-oriented crack is brittle, while the S-Mo-S angle-oriented crack becomes ductile. Our findings shed sights on mechanical design of heteroelemental 2D materials via dislocation engineering for practical application.
关键词： Mechanical strength,Fracture characteristics,Monolayer MoS2,Molecular dynamics simulations,Dislocation cores
更新于2025-09-23 15:23:52
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Adsorption of hazardous gases in nuclear islands on monolayer MoS2 sheet
摘要： Monitoring and removing the hazardous gases (such as radioactive gases and hydrogen) in the nuclear islands are full with enormous challenges, although the two methods can improve the safety level of the nuclear power plant. Due to its excellent electronic and chemical properties, two dimensional materials are considered as the candidate for monitoring and removing the hazardous gases in the nuclear islands. In this paper, the adsorption of the hazardous gases on monolayer MoS2 sheet was investigated by using the first principles calculation method. The adsorption energy, total charge transfer, and density of states (DOS) were calculated to understand the adsorption mechanism and sensing performance of the monolayer MoS2 sheet to the hazardous gases. The results show that an attractive interaction exists between the hazardous gases and the monolayer MoS2 sheet. The magnitude of the adsorption energy demonstrates that physisorption dominates the adsorption of the hazardous gas molecules on the monolayer MoS2 sheet, but the adsorption of the dissociated H/I atom belongs to chemisorption. The DOS shows that the orbitals, H 1s and I 5p, play a crucial role in the adsorption, and the change of the electronic structure indicates that the monolayer MoS2 sheet might be a promising material which is used for monitoring the gaseous radioactive iodine in the nuclear islands.
关键词： Hydrogen,Hazardous gases,Radioactive gases,First principles calculation,Monolayer MoS2 sheet
更新于2025-09-23 15:23:52
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Monolayer MoS? Strained to 1.3% With a Microelectromechanical System
摘要： We report on a modified transfer technique for atomically thin materials integrated into microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and fragility of MEMS while still providing precise positioning and crack-free transfer of flakes. Furthermore, our method used the transfer polymer to anchor the 2D crystal to the MEMS, which reduces the fabrication time and increases the yield, and allowed us to exploit the strong mechanical coupling between the 2D crystal and polymer to strain the atomically thin system. We successfully strained single atomic layers of molybdenum disulfide (MoS2) with MEMS devices for the first time and achieved greater than 1.3% strain, marking a major milestone for incorporating 2D materials with MEMS. We used the established strain response of MoS2 Raman and photoluminescence spectra to deduce the strain in our crystals and provide a consistency check. We found good comparison between our experiment and the literature.
关键词： photoluminescence,Raman,strain,monolayer MoS2,MEMS
更新于2025-09-23 15:22:29
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Flexible engineering of light emission in monolayer MoS <sub/>2</sub> via direct laser writing for multimode optical recording
摘要： Direct laser writing has been proved to be capable for effective modulation of optical and electrical properties of various nanomaterials. In this work, we designed a flexible direct laser writing approach to engineer photoluminescence (PL) properties of monolayer MoS2 and present its potential application in optical recording. PL spectra evolution of monolayer MoS2 under continuous-wave laser writing has been explored, where its PL energy can be precisely controlled by changing the writing time. This feature enables a multimode optical recording with spectral contrast in monolayer limit materials for high-capacity data storage technologies. Here, we constructed a proof-of-principle multimode optical recording on monolayer MoS2 based on the PL wavelength division multiplexing scheme and discussed the relevant challenges for practical applications. Our flexible approach with a mask-free feature and high spatial resolution is promising for applications in two-dimensional material-based information storage and optoelectronic devices.
关键词： direct laser writing,photoluminescence,monolayer MoS2,wavelength division multiplexing,optical recording
更新于2025-09-23 15:21:01
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[IEEE ESSDERC 2018 - 48th European Solid-State Device Research Conference (ESSDERC) - Dresden, Germany (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET
摘要： This study reports the interfacial engineering by means of SAM (Self-assembled monolayer)-based gate dielectric on channel mobility in molybdenum disulfide (MoS2) field-effect transistors (FETs). A gated four-probe method was implemented to eliminate the effect of contact resistance on channel mobility. The formation of SAM significantly plays an important role in the improvement of channel mobility as high as 19 cm2/Vs in MoS2 FETs because the superior interfacial properties can be realized in MoS2/SAM structure. This study opens up interesting direction of interface engineering for research in the applications and developments of 2-dimensional materials-based thin film devices.
关键词： FETs,Interface properties,Channel mobility,Self-assembled monolayer,MoS2
更新于2025-09-23 15:21:01
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High-performance monolayer MoS2 photodetector enabled by oxide stress liner using scalable chemical vapor growth method
摘要： MoS2, as a typical representative of two-dimensional semiconductors, has been explored extensively in applications of optoelectronic devices because of its adjustable bandgap. However, to date, the performance of the fabricated photodetectors has been very sensitive to the surrounding environment owing to the large surface-to-volume ratio. In this work, we report on large-scale, high-performance monolayer MoS2 photodetectors covered with a 3-nm Al2O3 layer grown by atomic layer deposition. In comparison with the device without the Al2O3 stress liner, both the photocurrent and responsivity are improved by over 10 times under 460-nm light illumination, which is due to the tensile strain induced by the Al2O3 layer. Further characterization demonstrated state-of-the-art performance of the device with a responsivity of 16.103 A W?1, gain of 191.80, NEP of 7.96?×?10?15 W Hz?1/2, and detectivity of 2.73?×?1010 Jones. Meanwhile, the response rise time of the photodetector also reduced greatly because of the increased electron mobility and reduced surface defects due to the Al2O3 stress liner. Our results demonstrate the potential application of large-scale strained monolayer MoS2 photodetectors in next-generation imaging systems.
关键词： photodetector,Al2O3,stress liner,monolayer MoS2
更新于2025-09-23 15:19:57
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Interplay of charge transfer and disorder in optoelectronic response in Graphene/hBN/MoS<sub>2</sub> van der Waals heterostructures
摘要： Strong optoelectronic response in the binary van der Waals heterostructures of graphene and transition metal dichalcogenides (TMDCs) is an emerging route towards high-sensitivity light sensing. While the high sensitivity is an effect of photogating of graphene due to inter-layer transfer of photo-excited carriers, the impact of intrinisic defects, such as traps and mid-gap states in the chalcogen layer remain largely unexplored. Here we employ graphene/hBN (hexagonal boron nitride)/MoS2 (molybdenum disulphide) trilayer heterostructures to explore the photogating mechanism, where the hBN layer acts as interfacial barrier to tune the charge transfer timescale. We find two new features in the photoresponse: First, an unexpected positive component in photoconductance upon illumination at short times that preceeds the conventional negative photoconductance due to charge transfer, and second, a strong negative photoresponse at infrared wavelengths (up to 1720 nm) well-below the band gap of single layer MoS2. Detailed time and gate voltage-dependence of the photoconductance indicates optically-driven charging of trap states as possible origin of these observations. The responsivity of the trilayer structure in the infrared regime was found to be extremely large (> 108 A/W at 1550 nm using 20 mV source drain bias at 180 K temperature and ≈ ?30 V back gate voltage). Our experiment demonstrates that interface engineering in the optically sensitive van der Waals heterostructures may cast crucial insight onto both inter- and intra-layer charge reorganization processes in graphene/TMDC heterostructures.
关键词： defects and disorders in TMDCs,monolayer MoS2,phototransistor,graphene,infrared photodetection,Van der Waals heterostructures
更新于2025-09-23 15:19:57
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Laser annealing towards high-performance monolayer MoS2 and WSe2 field effect transistors
摘要： The transition metal dichalcogenides (TMDCs) have been intensively investigated as one of promising nanoelectronic and optoelectronic materials. However, the pervasive adsorbates on the surface of monolayer TMDCs, including oxygen and water molecules from the ambient environments, predominately degrade the device performance, thus hindering the precise applications. In this work, we report the effect of laser irradiation on the transport and photoresponse of monolayer MoS2 and WSe2 devices, and this laser annealing process is demonstrated as one straightforward approach to remove the physically adsorbed contaminations. Compared with vacuum pumping and in-situ thermal annealing treatments, the field-effect transistors after the laser annealing show more than one order of magnitude higher on-state current, and no apparent degradation of device performance at low temperature. The mobility of monolayer WSe2 devices can be enhanced by 3-4 times, and for single-layered MoS2 devices with the commonly used SiO2 as the back-gate, the mobility increases by 20 times, reaching 37 cm2 ? V?1 ? s?1. The efficient cleaning effect of the laser annealing is also supported by the reduction of channel and contact resistances revealed by the transmission line experiment. Further, the enhanced photocurrent by a factor of 10 has been obtained in the laser annealed device. These findings pave the way for the high-performance monolayer TMDCs-based electronic and optoelectronic devices with the clean surface and intrinsic properties.
关键词： TMDCs,monolayer MoS2,photoresponse,field-effect transistors,laser annealing,monolayer WSe2
更新于2025-09-19 17:13:59
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Rapid, facile, reagentless, and room-temperature conjugation of monolayer MoS2 nanosheets with dual-fluorophore-labled flares as Nanoprobes for ratiometric sensing of TK1 mRNA in living cells
摘要： Direct loading of fluorophore-labeled DNA molecules (named as flares) on gold nanoparticles (AuNPs) is a controllable and straightforward approach for intracellular imaging of target DNA molecules. However, the modification of AuNPs with flares requires a tedious and time-consuming procedure, additional reagents, or adenosine-rich DNA molecules. Here, we developed a rapid, simple, reagentless, and room-temperature approach for the modification of monolayer molybdenum disulfide nanosheets (M-MoS2 NSs) with dual-fluorophore-labeled flares, which were implemented for ratiometric imaging of TK1 mRNA in living cells. The duplexes were prepared by hybridizing thiolated single-stranded DNA (ssDNA) to 6-carboxyfluorescein (FAM)- and 5-carboxytetramethylrhodamine (TAMRA)-labeled flares. Fabrication of the nanoflares was conducted by conjugating the formed duplexes to the surface sulfur vacancy sites of the M-MoS2 NSs. The time for preparing the nanoflares was found to be completed within 1 h. In the nanoflares, FAM stays away from TAMRA, leading to inefficient fluorescence resonance energy transfer (FRET). The presence of perfectly matched DNA (DNApm) molecules induces the liberation of the flares from the nanoflares. The liberated flares fold into hairpin-shaped structures, causing high FRET efficiency from FAM to TAMRA and efficient FAM-TAMRA static quenching. Following this mechanism, the nanoflares provided an effective platform for ratiometric sensing of DNApm molecules with the limit of detection (at a signal-to-noise ratio of 3) of 8 nM and the linear range of 25?500 nM. Confocal microscopy experiments demonstrated that the nanoflares can be used to ratiometrically image TK1 mRNA in HeLa and MCF-7 cells.
关键词： ratiometric sensing,monolayer MoS2 nanosheets,TK1 mRNA,dual-fluorophore-labeled flares,living cells
更新于2025-09-16 10:30:52