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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Measurement of the Silicon Lattice Parameter by Scanning Single Photon X-Ray Interferometry
摘要： This paper describes the measurement of the silicon lattice parameter in the SI-unit of length by combined optical and x-ray scanning interferometry. The detection of single x-ray photon quantum beats allows the continuous data acquisition of the x-ray interference fringes at increased scanning speeds compared to traditional experimental setups. MC-simulations show, that this scheme can reduce the scanning length by one order of magnitude while maintaining the same level of uncertainty. A high resolution optical interferometer with a continuous phase retrieval at a clock rate of minimum 10 kHz is required for this scanning method.
关键词： x-rays,displacement measurement,Avogadro constant,SI-units,interferometry,silicon lattice parameter,nanometrology
更新于2025-09-10 09:29:36
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Linewidth calibration using a metrological atomic force microscope with a tip-tilting mechanism
摘要： The linewidth or critical dimension (CD) of a nanoscale line pattern is calibrated using a metrological atomic force microscope with a tip-tilting mechanism (tilting-mAFM). The tilting tip allows scanning of the line pattern’s vertical sidewalls. The tilting-mAFM performs two measurements on each side of the line pattern, and two datasets are stitched together to reconstruct the complete shape of the line pattern. Further, CD is measured based on this pattern. A linewidth standard with a subnanometer-scale uncertainty was used as a target sample to verify this CD calibration procedure. The calibrated CD using tilting-mAFM was 111.2 nm with an expanded uncertainty of 1.0 nm, which was the smallest uncertainty that was observed among the CD measurements that were reported using the tilting-AFM instruments. Further, the difference of this CD value from the reference CD was only 0.2 nm. The results reveal that tilting-mAFM can be used for CD metrology with a single-nanometer accuracy.
关键词： metrological AFM,critical dimension (CD),calibration,tilting-AFM,nanometrology,linewidth
更新于2025-09-10 09:29:36