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Nano-rheology printing of sub-0.2 <i>μ</i> m channel length oxide thin-film transistors
摘要： Down-scaling of the channel length of a fully solution-processed oxide thin-film transistor (TFT) to the nanometer-scale is the key to accessing next-generation devices for Internet-of-Things technology. In this work, we report on the fabrication of an oxide TFT with a channel length of 160 nm, which is far less than those obtained by the current direct-printing techniques, by a newly developed nano-rheology printing (nRP) method. The device had an on/off current ratio, subthreshold voltage, hysteresis, and field-effect mobility of approximately 107, 1.7 V, 0 V, and 0.16 cm2 V s-1, respectively. The key to achieving the sub-micron channel printed TFT is the introduction of a new amorphous La–Ru–O material, which exhibits relatively good conductivity and excellent nRP properties at the nanoscale, for source/drain electrode patterns. Such a short-channel TFT would never be achieved with conventional printing methods, and hence, this approach is highly important for accessing next-generation low-cost, large-area and environmentally friendly printed electronics.
关键词： nano-rheology printing,thermal-imprinting,printed electronics,solution process,oxide thin-film transistor
更新于2025-09-23 15:23:52
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Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping
摘要： Praseodymium-doped indium zinc oxide (PrIZO) have been employed as the channel layer of thin film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NBIS) were achieved in the PrIZO-TFTs. Meanwhile, the PrIZO-TFTs showed reasonable characteristics with a high field effect mobility of 26.3 cm2/Vs, SS value of 0.28 V/decade, and Ion/Ioff ratio of 108. X-ray photoelectron spectroscopy (XPS), microwave photoconductivity decay (Micro-PCD) and photoluminescence spectra (PL) were employed to analyze the effects of the Pr concentrations on the performance of PrIZO-TFTs. We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors. Finally, a prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices.
关键词： Praseodymium doping,negative bias illumination stress,metal oxide,thin film transistor,photo-response
更新于2025-09-23 15:22:29
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Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
摘要： The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec?1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
关键词： tin oxide,thin-film transistor,aluminum doping,adhesive property,oxide semiconductor
更新于2025-09-19 17:15:36
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[IEEE 2019 International Energy and Sustainability Conference (IESC) - Farmingdale, NY, USA (2019.10.17-2019.10.18)] 2019 International Energy and Sustainability Conference (IESC) - Methodology for the implementation of photovoltaic energy in a microgrid
摘要： A new accurate voltage-programmed pixel circuit for active-matrix organic light-emitting diode (AMOLED) displays is presented. Composed of three TFTs and one storage capacitor, the proposed pixel circuit is implemented both in a-Si and a-IGZO TFT technologies for the same pixel size for fair comparison. The simulation result for the a-Si-based design shows that, during a programming time of 90 s, the pixel circuit was able to compensate for a 3 V threshold voltage ( ) shift of the drive TFT with almost no error. In contrast, the a-IGZO-based pixel circuit, has a larger current error (of around 8%), despite its proven three-fold higher speed.
关键词： Active-matrix organic light-emitting diode (AMOLED),compensation,oxide thin-film transistor (TFT),amorphous silicon (a-Si)
更新于2025-09-19 17:13:59
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Effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films
摘要： Effects of exposure to ultraviolet (UV) photons and thermal treatments on solution-processed amorphous indium gallium zinc oxide (a-IGZO) films were investigated by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectroscopy. As a result, oxygen vacancies obviously become more abundant in the films sintered at 250 or 300 ?C by the exposure to 7.21 eV photons and less abundant by the subsequent thermal treatment at 250 ?C in air. The drain current also clearly becomes smaller in a thin film transistor fabricated using the IGZO film in a manner opposite to the abundance of oxygen vacancies. That is, the drain current becomes smaller by the UV irradiation and returns to the original high value by the subsequent thermal treatment. This indicates that oxygen vacancies act as trapping centers or scattering centers of electrons. In addition, the reversible change of the drain current with the cycle of UV irradiation and the thermal treatment opens the possibility of the use of the IGZO films as a UV sensor.
关键词： oxygen vacancies,amorphous indium gallium zinc oxide,thin film transistor,UV irradiation,thermal treatment
更新于2025-09-10 09:29:36
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The Effect of the Thickness and Oxygen Ratio Control of Radio-Frequency Magnetron Sputtering on MgZnO Thin-Film Transistors
摘要： In this study, we use silicon dioxide for a magnesium-zinc-oxide thin-film transistor gate dielectric layer, controlling the thickness of the active layer and the Mg content of the film by radio-frequency (RF) sputtering. With an ideal thickness, a magnesium-zinc-oxide thin-film transistor can function normally. As the active layer thickness is controlled at 10 nm and the sputtering oxygen-flow rate is controlled at 14% to properly compensate for the oxygen vacancies, we can obtain the best features. The result of the analysis showed a field-effect mobility of 5.65 cm2/V · s, a threshold voltage of 3.1 V, a subthreshold swing improved to 0.80, and a current-switch ratio of over five orders of magnitude.
关键词： RF Sputtering,Magnesium Zinc Oxide,Thin-Film Transistor
更新于2025-09-09 09:28:46