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[IEEE 2020 International Conference on Computing, Networking and Communications (ICNC) - Big Island, HI, USA (2020.2.17-2020.2.20)] 2020 International Conference on Computing, Networking and Communications (ICNC) - On Performance of Multiuser Underwater Wireless Optical Communication Systems
摘要： This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector–emitter voltage VC E O N and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.
关键词： power cycling test,physics-of-failure,Failure mechanism,lifetime model,insulated-gate bipolar transistor module,reliability
更新于2025-09-23 15:21:01
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[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Manipulation of Biomolecules Into Nanogap by Plasmonic Optical Excitation for Highly Sensitive Biosensing
摘要： This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector–emitter voltage VC E O N and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.
关键词： insulated-gate bipolar transistor module,physics-of-failure,power cycling test,lifetime model,Failure mechanism,reliability
更新于2025-09-23 15:19:57
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[IEEE 2019 Workshop on Recent Advances in Photonics (WRAP) - Guwahati, India (2019.12.13-2019.12.14)] 2019 Workshop on Recent Advances in Photonics (WRAP) - Shadowgraphic Imaging of Cavitation Bubble Dynamics in Pulsed Laser Ablation of a Solid in Liquid
摘要： Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power conversion applications where their reliability is of significant concern. Standard IGBT modules are fabricated for general-purpose applications while little has been designed for bespoke applications. However, conventional design of IGBTs can be improved by the multiobjective optimization technique. This paper proposes a novel design method to consider die-attachment solder failures induced by short power cycling and baseplate solder fatigue induced by the thermal cycling which are among major failure mechanisms of IGBTs. Thermal resistance is calculated analytically and the plastic work design is obtained with a high-fidelity finite-element model, which has been validated experimentally. The objective of minimizing the plastic work and constrain functions is formulated by the surrogate model. The nondominated sorting genetic algorithm-II is used to search for the Pareto-optimal solutions and the best design. The result of this combination generates an effective approach to optimize the physical structure of power electronic modules, taking account of historical environmental and operational conditions in the field.
关键词： fatigue,power cycling (PC),insulated-gate bipolar transistors (IGBTs),thermal cycling (TC),reliability,optimization methods,finite-element (FE) methods,Aging,multiobjective
更新于2025-09-19 17:13:59
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[IEEE IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society - Lisbon, Portugal (2019.10.14-2019.10.17)] IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society - Techno-Economic Analysis of Building Integrated Photovoltaics Electrical Installations
摘要： Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power conversion applications where their reliability is of significant concern. Standard IGBT modules are fabricated for general-purpose applications while little has been designed for bespoke applications. However, conventional design of IGBTs can be improved by the multiobjective optimization technique. This paper proposes a novel design method to consider die-attachment solder failures induced by short power cycling and baseplate solder fatigue induced by the thermal cycling which are among major failure mechanisms of IGBTs. Thermal resistance is calculated analytically and the plastic work design is obtained with a high-fidelity finite-element model, which has been validated experimentally. The objective of minimizing the plastic work and constrain functions is formulated by the surrogate model. The nondominated sorting genetic algorithm-II is used to search for the Pareto-optimal solutions and the best design. The result of this combination generates an effective approach to optimize the physical structure of power electronic modules, taking account of historical environmental and operational conditions in the field.
关键词： power cycling (PC),Aging,fatigue,insulated-gate bipolar transistors (IGBTs),thermal cycling (TC),multiobjective,optimization methods,reliability,finite-element (FE) methods
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - a-Si:H/c-Si interface hydrogenation for implied V <sub/>oc</sub> = 755 mV in Silicon heterojunction solar cell
摘要： Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power conversion applications where their reliability is of significant concern. Standard IGBT modules are fabricated for general-purpose applications while little has been designed for bespoke applications. However, conventional design of IGBTs can be improved by the multiobjective optimization technique. This paper proposes a novel design method to consider die-attachment solder failures induced by short power cycling and baseplate solder fatigue induced by the thermal cycling which are among major failure mechanisms of IGBTs. Thermal resistance is calculated analytically and the plastic work design is obtained with a high-fidelity finite-element model, which has been validated experimentally. The objective of minimizing the plastic work and constrain functions is formulated by the surrogate model. The nondominated sorting genetic algorithm-II is used to search for the Pareto-optimal solutions and the best design. The result of this combination generates an effective approach to optimize the physical structure of power electronic modules, taking account of historical environmental and operational conditions in the field.
关键词： fatigue,power cycling (PC),insulated-gate bipolar transistors (IGBTs),thermal cycling (TC),reliability,optimization methods,finite-element (FE) methods,Aging,multiobjective
更新于2025-09-19 17:13:59
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[ASME ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - San Francisco, California, USA (Monday 27 August 2018)] ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - Failure Mechanism Assessment of TO-247 Packaged SiC Power Devices
摘要： As the efficiency of power electronics becomes more important, the use of silicon carbide (SiC) devices in power electronics has shown several benefits in efficiency, blocking voltage and high temperature operation. In addition, the ability of SiC to operate at higher frequencies due to lower switching losses can result in reduced weight and volume of the system, which also are important factors in vehicles. However, the reliability of packaged SiC devices is not yet fully assessed. Previous work has predicted that the different material properties of SiC compared to Si could have a large influence on the failure mechanisms and reliability. For example, the much higher elastic modulus of SiC compared to Si could increase strain on neighboring materials during power cycling. In this work, the failure mechanisms of packaged Si- and SiC-based power devices have been investigated following power cycling tests. The packaged devices were actively cycled in 4.5 s heating and 20 s cooling at ΔT = 60 - 80 K. A failure analysis using micro-focus X-ray and scanning acoustic microscopy (SAM) was carried out in order to determine the most important failure mechanisms. The results of the analysis indicate that the dominant failure mechanism is wire bond lift-off at the device chip for all of the SiC-based devices. Further analysis is required to determine the exact failure mechanisms of the analyzed Si-based devices. In addition, the SiC-based devices failed before the Si-based devices, which could be a result of the different properties of the SiC material.
关键词： power cycling,SiC,power electronics,failure mechanisms,reliability
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Investigation of Performance Degradation in Enhancement-Mode GaN HEMTs under Accelerated Aging
摘要： In this paper, the performance degradation of enhancement-mode (E-mode) GaN HEMFs under accelerated aging is presented in detail. A real-time degradation monitoring tool is essential to prevent costly shutdowns and minimize safety concerns. Specifically, a DC power cycling setup is first designed which operates within the safe operating area (SOA) of the device to mimic the field operation and accelerate the aging process. The E-mode GaN devices are mounted on a custom designed PCB adaptor to accommodate the curve tracer where all the parasitics are carefully controlled to minimize the measurement errors. Using the curve tracer, the parameter shifts are periodically monitored at certain aging cycles. From the experimental results, it is observed that the on-state resistance and the threshold voltage are gradually increasing over the aging cycles, which makes potential failure precursors. Meanwhile, a variation in the transfer characteristics is observed, and the transconductance decreases as the device is aged. Finally, a detailed theoretical analysis is provided to explain this parameter shift in experiments.
关键词： Power cycling,Cascode GaN device,Failure model,Aging precursor
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Power Cycling of Commercial SiC MOSFETs
摘要： The robustness under power cycling of three comparable silicon carbide MOSFETs in TO-247 packages from three different manufacturers is investigated, with silicon IGBTs serving as reference. The power cycling method, especially the junction temperature measurement and best practices to ensure its accuracy, is described. The results give insight into reliability and variability as well as aging behavior and failure modes. We ?nd a large variability between samples, both in initial characteristics and measured cycling lifetime, as well as signs of semiconductor device degradation. There is a signi?cant spread in the extent of the variability, in the average and minimum observed lifetime, as well as in the failure mode. Some samples fail quickly due to bond wire defects, some due to semiconductor degradation, while others show very long lifetimes.
关键词： power cycling,SiC MOSFETs,variability,reliability,aging behavior,failure modes
更新于2025-09-04 15:30:14