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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
摘要： Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
关键词： Breakdown electric field,Baliga’s figure of merit,On-resistance,Ultrawide bandgap semiconductor,Gallium oxide (Ga2O3),Power device,Schottky barrier diode (SBD)
更新于2025-09-23 15:22:29
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Progress of power field effect transistor based on ultra-wide bandgap Ga <sub/>2</sub> O <sub/>3</sub> semiconductor material
摘要： As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.
关键词： ultra-wide bandgap semiconductor,field effect transistor (FET),power device,gallium oxide (Ga2O3)
更新于2025-09-19 17:15:36
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Comparative Evaluation of Lifetime of Three-Level Inverters in Grid-Connected Photovoltaic Systems
摘要： The cost of the PV energy reduction is still required to increase the penetration level of PV systems in the energy market. The reliability of PV inverters is one of the important aspects to be enhanced in order to reduce the cost of PV energy, since it is closely related to the maintenance cost and the annual energy production. In this paper, the lifetime of NPC and T-type inverters, which are three-level inverter topologies that are widely used for PV systems, are comparatively evaluated with a 30 kW grid-connected PV system. It is performed by focusing on power devices since the power electronic components of both converters are the same except for the power devices. Therefore, this result can represent the comparison of the reliability performance of the NPC and T-type inverters. The power loss and temperature distributions of power devices are analyzed and their e?ciencies are compared at di?erent power levels with di?erent switching frequencies. The lifetimes of the reliability-critical power devices in the NPC and T-type inverters are estimated, respectively with a one-year mission pro?le of the PV system, and the results are compared.
关键词： three-level inverter,IGBT module,PV inverter,reliability,power device,lifetime
更新于2025-09-19 17:13:59
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Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
摘要： Nickel Silicidation reactions were activated on 4H-SiC using laser annealing at wavelength of 308 nm to study interaction and re-action of the involved atomic species. With this intent, the deposited nickel layer thickness was scaled from 100 nm to 10 nm and the laser fluence was spanned from 2.2 to 4.2 J/cm2. A combination of structural characterization by X-ray diffraction, Energy-Dispersive X-ray spectroscopy, Raman Spectroscopy, Transmission Electron Microscopy and morphological investigations through Scanning Electron Microscopy with theoretical predictions as a function of the applied laser fluence, have unveiled that the starting nickel thickness plays a main role, especially above the threshold for nickel melting (2.8J/cm2). As a general paradigm, sufficient silicon release from the substrate occurs above this threshold that is available for silicidation, with amount increasing with the laser fluence. This addresses stoichiometry and morphology of the silicided contact that indeed depend on the available Nickel atoms (i.e. the Ni layer thickness) and on the thermal profile, as tested at a fixed fluence of 3.8J/cm2. In addition, a layer-by-layer variable stoichiometry is established in each sample through the contact, with the deepest silicide being relatively more Si-rich. All those findings have impact on the electrical parameters of testing diodes. Based on data cross-linking, NiSi2 contacting layers and C-free interfaces provide a convenience in reducing resistance contributions.
关键词： simulation,silicon carbide,power device,UV-laser,silicidation reaction,chemical composition
更新于2025-09-11 14:15:04
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Mission Profile-Oriented Control for Reliability and Lifetime of Photovoltaic Inverters
摘要： With the aim to increase the competitiveness of solar energy, the high reliability of Photovoltaic (PV) inverters is demanded. In PV applications, the inverter reliability and lifetime are strongly affected by the operating condition that is referred to as the mission profile (i.e., solar irradiance and ambient temperature). Since the mission profile of PV systems is location-dependent, the inverter reliability performance and lifetime can vary considerably in practice. That is, from the reliability perspective, PV inverters with the same design metrics (e.g., component selection) may become over- or under-designed under different mission profiles. This will increase the overall system cost, e.g., initial cost for over-designed cases and maintenance cost for under-designed cases, which should be avoided. This paper thus explores the possibility to adapt the control strategies of PV inverters to the corresponding mission profiles. With this, similar reliability targets (e.g., component lifetime) can be achieved even under different mission profiles. Case studies have been carried out on PV systems installed in Denmark and Arizona, where the lifetime and the energy yield are evaluated. The results reveal that the inverter reliability can be improved by selecting a proper control strategy according to the mission profile.
关键词： capacitor,reliability,lifetime,PV inverters,mission profile,power device,control
更新于2025-09-11 14:15:04
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Chip to chip communication through the photonic integrated circuit: A new paradigm to optical VLSI
摘要： The chip to chip communication pertaining to ultra-low power-based very large integrated device is addressed in this paper using photonic integrated circuits (PIC) where photonic circuits comprise nanoscale based light sources, one-dimensional waveguide, and photodetector. The principle of realization of transportation of signal through PIC relies on a different type of losses including diffraction, reflection, scattering, dispersion, and absorption. Moreover, the operational mechanism deals with the low potential signal of 0.5 V to 1.0 V for said communication. The reason for choosing such low potential is that different works related to industrial research are being operated nowadays to develop an efficient VLSI device.The current research has certain hegemony related to miniaturization size and high efficiency as compared to others. To overall, the present communication shows a new paradigm to optical VLSI for near future application in the field of photonics.
关键词： Photonic integrated circuit,Optical VLSI,low power device
更新于2025-09-11 14:15:04
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Electrical Performances of InN/GaN Tunneling Field-Effect Transistor
摘要： In this paper, we design and analyze the InN/GaN double-gate (DG) tunneling ?eld-effect transistor (TFET) with very steep switching and superb DC and RF characteristics. The proposed device is closely investigated in terms of both DC and RF performances including Ioff, on/off current ratio (Ion/Ioff), subthreshold swing (S), cut-off frequency (ft), maximum oscillating frequency (fmax), and Johnson’s ?gure of merit (JFOM) using TCAD simulation. The proposed InN/GaN TFET shows high current drivability, extremely suppressed Ioff, and higly sharp switching owing to the effects by the electron well formed by the control gate (CG) in the InN layer. The InN/GaN TFET having a channel length (Lch) of 50 nm demonstrated maximum Ion = 3.5 mA/μm, extremely low Ioff = 1 × 10?21 A/μm, minimum S of 8.8 mV/dec, and the maximum values of ft and fmax are obtained as 100 GHz and 5.5 THz, respectively. In order to con?rm the high performances of the devices in the RF operation, JFOM has been calculated and the value extracted from an optimally designed InN/GaN TFET is 1.7 THz · V.
关键词： III-Nitride Heterojunction,Double Gate,Gallium Nitride,Power Device,InN/GaN,Field-Effect Transistor
更新于2025-09-04 15:30:14