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: From quantum dots to bulk crystals and additional boundary conditions for Rydberg exciton-polaritons
摘要： We propose schemes for calculation of optical functions of a semiconductor with Rydberg excitons for a wide interval of dimensions. We have started with a zero-dimensional structure (quantum dot), then going to one-dimensional (quantum wire), two-dimensional (quantum wells and wide quantum wells), and ?nally three-dimensional bulk crystals; our analytical ?ndings are illustrated numerically, showing an agreement with available experimental data. Calculations including exciton-polaritons are performed; the case of a large number of polariton branches is discussed, and obtained theoretical absorption spectra show good agreement with experimental data.
关键词： quantum wells,bulk crystals,exciton-polaritons,quantum wires,Rydberg excitons,quantum dots
更新于2025-09-23 15:21:01
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Effect of illumination on quantum lifetime in GaAs quantum wells
摘要： Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain unchanged, but what exactly causes it remains unclear. Here, we investigate the effect of illumination on microwave photoresistance in low magnetic fields. We find that the amplitude of microwave-induced resistance oscillations grows dramatically after illumination. Dingle analysis reveals that this growth reflects a substantial increase in the single-particle (quantum) lifetime, which likely originates from the light-induced redistribution of charge enhancing the screening capability of the doping layers.
关键词： quantum lifetime,microwave photoresistance,GaAs quantum wells,illumination effect,two-dimensional electron gas
更新于2025-09-23 15:21:01
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Short range proximity effect induced by exchange interaction in tunnel-coupled CdTe and (Cd,Mn)Te quantum wells
摘要： The coherent spin dynamics of electrons in tunnel-coupled CdTe and (Cd,Mn)Te quantum wells (QWs) is studied by time-resolved pump-probe Kerr rotation. The coupled QWs have different thicknesses; the narrow one is doped by Mn2+ magnetic ions. A short range proximity effect between them is observed: the Zeeman splitting of electrons in the wide QW is given in addition to the intrinsic electron g factor by the exchange interaction with the Mn2+ ions mediated by electron tunneling into the narrow QW. The exchange interaction strength scales with the Cd0.88Mg0.12Te barrier thickness separating the QWs. The Kerr rotation signal measured on the wide QW shows two close frequencies of electron spin Larmor precession in a transverse magnetic field. These components have very different spin dephasing times, 50 ps and 1 ns. The two frequencies originate from electrons in the wide QW being either part of an exciton or being resident. The proximity effect of the exciton electron is smaller due to the binding by Coulomb interaction, which decreases the tunneling to the narrow well. The experimental data are in good agreement with model calculations.
关键词： Kerr rotation,proximity effect,quantum wells,exchange interaction,spin dynamics
更新于2025-09-23 15:21:01
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Low-Voltage, Coupled Multiple Quantum Well Electroreflective Modulators towards Ultralow Power Inter-Chip Optical Interconnects
摘要： An electroreflective modulator based on multiple-pass electroabsorption (EA) of coupled multiple quantum wells (CMQWs) is demonstrated for integration with low-loss polymer optical waveguides towards inter-chip and on-board optical interconnects at 850 nm. Taking advantage of coupling between quantum states in MQWs, the top polymer cladding and the bottom Au mirror form a Fabry-Pérot cavity to further enhance the EA of CMQWs, thereby greatly improving the extinction ratio (ER) at a low voltage. The device achieves an ER of ~6 dB and an insertion loss (IL) <3 dB at 2 V, notably outperforming conventional surface-incident EA modulators at the same driving voltage. A further optimized modulator design can achieve a peak ER of 9-12 dB at 2V with a low IL of 2-3 dB and a relatively broad spectral bandwidth of ~10 nm. The low capacitance and reverse bias operation at a low voltage potentially offer ~10× lower power consumption compared to direct modulation of 850 nm lasers. This simple surface-incident CMQW modulator is a promising candidate for integration with ultralow power inter-chip and on-board interconnect architectures.
关键词： Modulator,Coupled Multiple Quantum Wells,Optical Interconnect,Fabry-Perot cavity,Electroabsorption
更新于2025-09-23 15:21:01
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Ultra-High Vacuum Annealing-Assisted Quantum Wells Dimensional Tailoring for Perovskite Light-Emitting Diodes Efficiency Enhancement
摘要： Quasi-two-dimensional (Q-2D) perovskites featured with multiple dimensional quantum wells (QWs) have been the main candidates for optoelectronic applications. However, the excessive low-dimensional perovskite is unfavorable to the device efficiency due to the phonon-exciton interaction and the inclusion of insulating large organic cation. Herein, the low-dimensional QWs formation is suppressed by removing the organic cation 1-naphthylmethylamine iodide (NMAI) through the ultra-high vacuum (UHV) annealing. The perovskite light-emitting diodes (PLEDs) devices based on films annealed with optimized UHV conditions show higher external quantum efficiency of 13.0% and wall-plug efficiency of 11.1% compared to otherwise identical devices with films annealed in a glovebox.
关键词： quantum wells,ultra-high vacuum annealing,dimensional tailoring,quasi-two-dimensional perovskites,perovskite light-emitting diodes
更新于2025-09-23 15:21:01
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Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process
摘要： This paper provides insights into the degradation of InGaN-based LEDs by presenting a comprehensive analysis carried out on devices having two quantum wells (QWs) with different emission wavelengths (495 nm and 405 nm). Two different configurations are considered: one with the 495 nm QW closer to the p-side and one with the 495 nm QW closer to the n-side. The original results collected within this work indicate that (i) during stress, the devices show an increase in defect-related leakage both in reverse and low-forward voltage ranges: current increases with the square-root of stress time, indicating the presence of a diffusion process; (ii) stress induces a decrease in the luminescence signal emitted by both quantum wells: the drop in luminescence is stronger when measurements are carried out at low current levels, indicating that degradation is due to the generation of Shockley–Read–Hall recombination centers; (iii) remarkably, the degradation rate is linearly dependent on the luminescence signal emitted before stress by the well, indicating that carrier density impacts on degradation; and (iv) the optical degradation rate has a linear dependence on the stress current density. The results strongly suggest the existence of a recombination-driven degradation process: the possible role of Shockley–Read–Hall and Auger recombination is discussed. The properties of the defects involved in the degradation process are described through steady-state photocapacitance measurements.
关键词： quantum wells,Shockley–Read–Hall recombination,Auger recombination,degradation,steady-state photocapacitance,InGaN-based LEDs
更新于2025-09-23 15:21:01
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Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template
摘要： We investigate the crystal quality of epitaxy lateral overgrowth (ELOG) AlN layers and the performance of optical pumping AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) on two different patterned AlN templates upon sapphire substrate. The full width at half maximum values of (0002) and (10 1(cid:2)2) X-ray diffraction rocking curves of the ELOG AlN layer on the nano-net-patterned AlN template are 76 and 306 arcsec, and the values of that on the nano-trench-patterned AlN template are 114 and 357 arcsec, respectively. Nevertheless, the threshold power density (Pth) of the 272-nm lasing from the multiple quantum wells (MQWs) on the nano-trench-patterned AlN template is 11% lower than that on the nano-net-patterned AlN template. The reason is that the continuous low threading dislocation density (TDD) MQWs zones above the ELOG coalescent areas upon trenched patterns are in parallel with the stimulated light emission direction. When light resonates through the continuous low TDD MQWs zones, it has higher optical gain and less non-radiative recombination than the case on the nano-net-patterned AlN template where the low TDD MQWs zones are discontinuous on the light path. The results indicate that not only the crystal quality but also the TDD distribution originated from the ELOG on the patterned templates have crucial influence on the Pth, and trench-patterned template can improve the performance of waveguide LDs with Fabry-Perot cavities.
关键词： laser diode,deep ultraviolet,multiple quantum wells,AlGaN,AlN
更新于2025-09-23 15:21:01
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Two-dimensional Hybrid Halide Perovskites: Principles and Prom-ises
摘要： Hybrid halide perovskites have become the “next big thing” in emerging semiconductor materials as the past decade witnessed their successful application in high-performance photovoltaics. This resurgence has seen enormous and widespread development of the three-dimensional (3D) perovskites, spearheaded by CH3NH3PbI3. The next generation of halide perovskites, however, is characterized by reduced dimensionality perovskites, emphasizing on the two-dimensional (2D) perovskite derivatives which expand as a more diverse subgroup of semiconducting hybrids that possesses even higher tunability and excellent photophysical properties. In this perspective, we begin with a historical flashback that traces back to early reports before the “perovskite fever” and we follow this original work to its fruition in the present day, where 2D halide perovskites are on the spotlight of current research, thriving on several aspects of high-performance optoelectronics. We approach the evolution of 2D halide perovskites from a structural perspective, providing a classification for the diverse structure-types of the materials, which largely dictate the unusual physical properties observed. We sort out the 2D hybrid halide perovskite based on two key components: the inorganic layers and their modification and the organic cation diversity. As these two heterogeneous components blend, either by synthetic manipulation (shuffling the organic cations or inorganic elements) or by external stimuli (temperature and pressure), the modular perovskite structure evolves to construct crystallographically defined quantum wells (QW). The complex electronic structure that arises is sensitive to the structural features that could be in turn used as a knob to control the dielectric and optical properties the QWs. We conclude this perspective with the most notable optoelectronic device achievements that have been demonstrated to date with an eye towards future material discovery and potential technological developments.
关键词： two-dimensional (2D) perovskite derivatives,optoelectronic devices,quantum wells (QW),Hybrid halide perovskites,semiconducting hybrids
更新于2025-09-23 15:21:01
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Complementary cathodoluminescence lifetime imaging configurations in a scanning electron microscope
摘要： Cathodoluminescence (CL) spectroscopy provides a powerful way to characterize optical properties of materials with deep-subwavelength spatial resolution. While CL imaging to obtain optical spectra is a well-developed technology, imaging CL lifetimes with nanoscale resolution has only been explored in a few studies. In this paper we compare three different time-resolved CL techniques and compare their characteristics. Two configurations are based on the acquisition of CL decay traces using a pulsed electron beam that is generated either with an ultra-fast beam blanker, which is placed in the electron column, or by photoemission from a laser-driven electron cathode. The third configuration uses measurements of the autocorrelation function g(2) of the CL signal using either a continuous or a pulsed electron beam. The three techniques are compared in terms of complexity of implementation, spatial and temporal resolution, and measurement accuracy as a function of electron dose. A single sample of InGaN/GaN quantum wells is investigated to enable a direct comparison of lifetime measurement characteristics of the three techniques. The g(2)-based method provides decay measurements at the best spatial resolution, as it leaves the electron column configuration unaffected. The pulsed-beam methods provide better detail on the temporal excitation and decay dynamics. The ultra-fast blanker configuration delivers electron pulses as short as 30 ps at 5 keV and 250 ps at 30 keV. The repetition rate can be chosen arbitrarily up to 80 MHz and requires a conjugate plane geometry in the electron column that reduces the spatial resolution in our microscope. The photoemission configuration, pumped with 250-fs 257-nm pulses at a repetition rate from 10 kHz to 25 MHz, allows creation of electron pulses down to a few ps, with some loss in spatial resolution.
关键词： Electron microscopy,Ultrafast,Cathodoluminescence,Time-resolved,Quantum wells
更新于2025-09-23 15:21:01
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Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells
摘要： We study the coherent dynamics of localized excitons in 100 periods of 2.5-nm-thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43-meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29 μeV as well as the relatively weak exciton-phonon interaction (0.7 μeV/K) confirm a strong, quantum-dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers.
关键词： localized excitons,photon echoes,exciton-phonon interaction,coherent dynamics,(In,Ga)N/GaN quantum wells
更新于2025-09-23 15:21:01