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oe1(光电查) - 科学论文

118 条数据
?? 中文(中国)
  • The effect of fractional derivative on photo-thermoelastic interaction in an infinite semiconducting medium with a cylindrical hole

    摘要: In the present paper, the theory of generalized photo-thermoelasticity under fractional order derivative was used to study the coupled of thermal, plasma, and elastic waves on unbounded semiconductor medium with a cylindrical hole during the photo-thermoelastic process. The bounding surface of the cavity was traction free and loaded thermally by exponentially decaying pulse boundary heat flux. The medium was considered to be a semiconductor medium homogeneous, and isotropic. In addition, the elastic and thermal properties were considered without neglecting the coupling between the waves due to thermal, plasma and elastic conditions. Laplace transform techniques were used to obtain the exact solution of the problem in the transformed domain by the eigenvalue approach and the inversion of Laplace transforms were carried out numerically. The results were displayed graphically to estimate the effect of the thermal relaxation time and the fractional order parameters on the plasma, thermal and elastic waves.

    关键词: Fractional calculus,Cylindrical cavity,A semiconducting material,Relaxation time,Laplace transform

    更新于2025-09-23 15:21:01

  • Dielectric relaxation and resistive switching of Bi0.96Sr0.04Fe0.98Co0.02O3/CoFe2O4 thin films with different thicknesses of the Bi0.96Sr0.04Fe0.98Co0.02O3 layer

    摘要: Bi0.96Sr0.04Fe0.98Co0.02O3/CoFe2O4(BSFCO/CFO) bilayered thin films with different thicknesses of the BSFCO layer are synthesized on FTO/glass substrates by chemical solution deposition method (CSD). The influence of BSFCO thickness on the microstructure, dielectric relaxation, ferroelectric properties and resistive switching (RS) of the thin films are researched. Strain exists in the prepared thin films and gives rise to structural distortion, which has an effect on charged defects and ferroelectric polarization. Dielectric relaxation that is closely related to the interfacial polarization at the BSFCO/CFO interface is observed, and the dielectric loss peaks along with decreasing intensity shift to high frequency with decreasing strain. The Maxwell-Wagner two-layer model is adopted to investigate the mechanism of dielectric relaxation, and the relaxation time τ is calculated and it shown to be directly proportional to the strain. It is found that the dielectric properties, including low dielectric loss, can be improved by controlling the BSFCO layer thickness. The ferroelectric properties improve with the decreasing strain, the 12-BSFCO/CFO thin film possesses a large Pr~102.9 μC/cm2 at 660 kV/cm. The observed resistive switching (RS) behavior is attributed to the interfacial conduction mechanism, it is found that strain-dependent the ferroelectric polarization switching modulates the width of depletion layer and the height of potential barrier at the interface, resulting in the different resistance states.

    关键词: dielectric relaxation,bilayered thin film,BiFeO3,resistive switching,strain

    更新于2025-09-23 15:21:01

  • Magnetic and Luminescence Properties of Two Dinuclear Lanthanide Complexes with Butterfly-like Arrangement

    摘要: Two dinuclear lanthanide complexes with pentadentate ligand 3-[bis(pyridine-2-ylmethyl)amino]propane-1,2-diol (H2L), formulated as [Ln2(HL)2(NO3)2(H2O)2]·1.5NO3·0.5I [Ln = Tb (ZTU-1) and Eu (ZTU-2); ZTU = Zhaotong University] were synthesized and structurally characterized. ZTU-1 and ZTU-2 are isomorphous and feature a butterfly-like arrangement. The fluorescence properties of ZTU-1 and ZTU-2 are investigated and slow magnetic relaxation behavior is observed in ZTU-1.

    关键词: Lanthanides,Slow magnetic relaxation,Luminescence,Dinuclear lanthanide complex

    更新于2025-09-23 15:21:01

  • Achieving the hypsochromic electroluminescence of ultraviolet OLED by tuning excitons relaxation

    摘要: Organic light emitting diode (OLED) has huge impact on display-related fields. Due to potential applications in information storage and backlight sources for full color display, ultraviolet OLED has attracted widespread attention. In this paper, we present an inverted UV OLED device with electroluminescence (EL) peak of 369 nm. The device employs zinc oxide (ZnO) as electron injection layer (EIL), revealing a relationship between the exciton diffusion and emitting peaks. The organic-inorganic interface in the device reduces the diffusion length of excitons and that can lead to a hampered relaxation of higher energy states, resulting in a hypsochromic shift of the EL spectrum. The existence of buffer layer will affect the relaxation process. Additionally, the emission peak of the UV-OLED can be adjusted from 369 nm to 384 nm by varying kinds and thickness of the organic functional layers.

    关键词: Hypsochromic shift,OLED,Exciton relaxation,Ultraviolet emission,Wavelength regulation,Diffusion model

    更新于2025-09-23 15:19:57

  • Electrical control of a spin qubit in InSb nanowire quantum dots: Strongly suppressed spin relaxation in high magnetic field

    摘要: In this paper we investigate the impact of gating potential and magnetic ?eld on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a strong g factor and high magnetic ?eld strength lead to the prevailing in?uence of electron-phonon scattering due to deformation potential, considered irrelevant for materials with a weak g factor, like GaAs or Si/SiGe. In this regime we ?nd that spin relaxation between qubit states is signi?cantly suppressed due to the con?nement perpendicular to the nanowire axis. We also ?nd that maximization of the number of single-qubit operations that can be performed during the lifetime of the spin qubit requres single quantum dot gating potential.

    关键词: spin qubit,spin relaxation,Rabi frequency,InSb nanowire,quantum dots

    更新于2025-09-23 15:19:57

  • Progress in Endovenous Pulsed Laser Ablation

    摘要: Continuous-wave (CW) lasers have been commonly used for endovenous laser ablation (EVLA). However, as some undesired side effects such as postoperative pain and bruising occasionally happens, longer laser wavelength and specially-fabricated laser fibers have been developed. On the other hand, the pulsed-wave (PW) laser, which has a heat production control by thermal relaxation, is independently developed for EVLA. This article discusses the implication of PW laser in EVLA from a theoretical point of view and a newly-developed micropulsation (MP) is introduced as a new concept. Since the MP yields adequate blood and vein wall heat degeneration by microseconds laser emission, efficacy and safety are improved compared with CW laser or conventional PW laser. Initial clinical outcome is favorable and promising for painless EVLA using inexpensive bare fiber.

    关键词: varicose vein,thermal relaxation time,micropulsation,endovenous laser ablation,clear tip mode

    更新于2025-09-23 15:19:57

  • Luminescence and dielectric properties of Ni2+ ions added to calcio yttria borophosphate glasses for optoelectronic uses

    摘要: Glass materials of composition CaO – Y2O3 – B2O3 – P2O5 added with different concentrations of NiO (Ni2+: CYBP) are synthesized by conventional rapid melt quenching method. Various physical properties of these glasses such as polaron radius (rp), molar volume (Vm), optical basicity (Λth) and refractive index (μ) are studied. As an elastic characterization Young’s modulus (Y), Poison ratio (σ) and micro hardness (H) of these glasses are studied. These grades suggest that the prepared materials are mechanically hard and exhibiting covalently interlinked structure. Further these samples are characterized by various techniques such as differential thermal analysis, thermoluminiscence, optical absorption, photoluminescence, Ionic conductivity and dielectric dispersion. The thermoluminiscence grades such as peak temperature maximum (Tm), shape symmetry factor (μsf) and activation energies ( Eτ, Eδ and Eω) are studied at various UV irradiation levels. These results strongly recommended that the both electron and hole trap centers were created at the deeper trap levels and contribute higher orders of thermoluminiscence emission with in these glasses subjected to higher orders of temperature and UV irradiation. The various optical absorption and photoluminescence factor's such as, optical band gap (Eo), nephelauxetic ratio (β), emission cross section (Ω), branching ratio (ζ) and radiative life times (τ) are studied. These grades found to be maximum for the material which has 0.5 mol% of NiO concentration may be most suggestible for optoelectronic application. The dc and ac conductivity (σdc & σac) of these glasses are estimated. The various dielectric parameter’s such as loss tangent (Tan (φ)), temperature region of relaxation (ΔT), density of states near Fermi level (N(Ef)), activation energies of both dipoles and conduction (Ed & Ec) are also calculated. These reports clearly disclose that the octahedrally located Ni2+ ions are increasing with increase NiO concentration with in present calcio yttria borophosphate glasses.

    关键词: emission cross section,nephelauxetic ratio,micro hardness,trap depth parameters,Ni2+: CYBP glass materials,temperature region of relaxation

    更新于2025-09-19 17:15:36

  • Stress Relaxation in Porous GaN Prepared by UV Assisted Electrochemical Etching

    摘要: This study describes the stress relaxation in porous GaN grown on Al2O3 substrates. The results indicate that the stress relaxation has taken place in the samples which increases by increasing the etching current. As compared to the as-grown GaN films, porous GaN exhibits substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge peaks associated with the relaxation of the compressive stress. The red shifted phonon energy peak (E2) in the Raman spectra of the porous GaN films confirms further such a stress relaxation. Scanning electron microscopy (SEM) demonstrates that, the current density has significant effect on the size and shape of the pores.

    关键词: Stress relaxation,Porous GaN,Raman spectroscopy,Red shift

    更新于2025-09-19 17:15:36

  • Modular Subarrayed Phased Array Design by Means of Iterative Convex Relaxation Optimization

    摘要: Subarray design technique is widely employed in the design of planar phased arrays. However, it’s hard to obtain full coverage and good radiation performance with the given shape of subarrays and array aperture. In this letter, the subarray design problem is formulated as an iterative convex relaxation model and solved through some steps subtly. Besides, the scanning sidelobe level is adopted to retrieve the optimal configuration among the found solutions. Numerical experiments are carried out to assess the performance of the proposed method as well as the inherent superiority in adaptive beamforming.

    关键词: modular subarray,convex relaxation,subarray design,adaptive beamforming

    更新于2025-09-19 17:15:36

  • Topics in Present-day Science Technology and Innovation: Ultrafast Relaxation Processes in Semiconductors

    摘要: The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Physics, more precisely on Thermo-Mechanical Statistics. In electronics and optoelectronics we face situations involving physical-chemical systems far-removed-from equilibrium, where ultrafast (in pico- and femto-second scale) and non-linear processes are present. Here we describe in an extended overview the question of ultrafast relaxation processes in the excited plasma in semiconductors.

    关键词: nonequilibrium thermodynamic,ultrafast relaxation,semiconductors

    更新于2025-09-19 17:15:36