- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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13.1: <i>Invited Paper:</i> Single-Photon-Capable Detector Arrays in CMOS-Exploring a New Tool for Display Metrology
摘要： The technology of CMOS-compatible Single Photon Avalanche Diodes is evolving rapidly and has matured to the point at which imaging it can address applications. In this report we consider the current suitability and future potential of CMOS-compatible Single Photon Avalanche Diodes to address the particular application of display metrology.
关键词： Display Metrology,dSiPM,Quanta Image Sensor,CMOS,QIS,Complementary Metal Oxide Semiconductor,Digital Silicon Photo-Multiplier,Single Photon Avalanche Diode,SPAD
更新于2025-09-10 09:29:36
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Nanotechnology in Water and Wastewater Treatment || Application of Semiconductor Nanoparticles for Removal of Organic Pollutants or Dyes From Wastewater
摘要： Increasing demand and shortage of pure water sources due to the rapid development of industrialization, population growth and long-term droughts have become an issue world-wide. Industrial growth produces a great variety of organic products and frequently these substances are complex to degrade. Industrial wastewater contains various chemicals especially synthetic dyes. Example, Textile industry generate large amount of wastewater derived to different processes of color impregnation in textile fibers, which has a great amount of detergents, dyes, microfiber (cellulose, wool, and synthetic fibers), and inorganic salts. This residual water, with great load pollutants, generates the contaminations of natural waters bodies. Now a day, more than 50% of dyes used in the textile industry are monoazo, diazo, and triazo dyes, considering their chemical stability (recalcitrant) and negative influence on the ecological systems, the regulations of the removal color in the factory effluent is a current issue of discussion all over the world. The presence of even very low concentrations of dyes in effluent is highly visible and degradation products of these textile dyes are often carcinogenic. These effluent wastewaters have been recognized to have high color, high BOD and COD load, as well as high dissolve organic matter (DOM) concentration. Dyes are aromatic compounds which can absorb light in the visible wavelengths range (400–700 nm). The dye molecule is a combination of a chromophore which is a part of the molecule that can absorb light, that is, the color-absorbing coordination group and a conjugated system, and a structure with alternating double and single bonds. Chromophores are containing C=C and C=O (carbonyl), and azo group -N=N- or nitro group (-NO2). A complex mixture containing various organic materials, including carbohydrates or polysaccharides, amino acids or peptides or proteins, lipids, humic substances, and anthropogenic organic pollutants is known as Dissolved organic matter (DOM). It plays critical roles both in drinking water (DWTPs) and wastewater treatment plants (WWTPs) in determining the treatment performance and the distributed water quality and it is found in everywhere. The presence of DOM not only affects the current discharge standards, but also presents significant challenges in wastewater restoration.
关键词： Wastewater,ZnO,Dyes,Fe2O3,Photocatalysis,Semiconductor Nanoparticles,Organic Pollutants,TiO2
更新于2025-09-10 09:29:36
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Reference Module in Materials Science and Materials Engineering || Silicon, Local Oxidation of (LOCOS)
摘要： The use of silicon as the most important semiconductor material for integrated circuits is a direct consequence of its oxidation properties. Silicon dioxide (SiO2) is a stable insulator that is used, among many other applications, for the gate oxide – the heart of the metal–oxide–semiconductor (MOS) device – and for lateral isolation of MOS and bipolar devices. The permittivity of SiO2 is around four times higher than that of air, but the stability, reproducibility, and controllability of this material are excellent, making it the best isolation material in the semiconductor industry.
关键词： Silicon dioxide (SiO2),MOS device,Local Oxidation of (LOCOS),Semiconductor,Isolation material,Silicon
更新于2025-09-10 09:29:36
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Aspects of Modeling the Electron Probe Heating of a Semiconductor Target
摘要： The problem of heat distribution in semiconductor materials irradiated by finely focused electron beams with no exchange of heat between the target and environment is investigated by means of mathematical modeling. In quantitatively describing the energy loss of probe electrons, a model applicable to a wide range of solids and primary electron energies is used that describes separately the contributions from absorbed and backscattered electrons to the energy dissipated in the target. The nonmonotonic dependence of the maximum target heating temperature on the primary electron energy is explained using aspects of the proposed approach. Some results are illustrated using the example of semiconductor electronic materials.
关键词： heat distribution,mathematical modeling,semiconductor target,electron probe heating,primary electron energy
更新于2025-09-10 09:29:36
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The metal-free magnetism and ferromagnetic narrow gap semiconductor properties in graphene-like carbon nitride
摘要： In spintronics, if a two-dimensional (2D) organic metal-free material has stable magnetism and narrow gap semiconductor properties, it will have a very bright application prospect. A graphene-like carbon nitride (g-C13N13) that we design just meets these requirements. As a new structure, firstly the stability of the g-C13N13 has been verified. It has stable electron spin polarization and the magnetic moment of each primitive cell is 1μB. It exhibits ferromagnetic narrow gap semiconductor properties through our analysis of energy band structure and charge density. Ferromagnetic ordering between two adjacent primitive cells is stable. The Monte Carlo simulation using the Ising model shows the Curie temperature material is 204K. Our research is an inspiration for the applications of this kind of materials in spintronics devices.
关键词： Metal-free magnetism,Electron spin polarization,Ferromagnetic ordering,Narrow gap semiconductor properties,Monte Carlo simulations
更新于2025-09-10 09:29:36
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Reference Module in Materials Science and Materials Engineering || Optical Lithography
摘要： Optical lithography is a photon-based technique comprised of projecting, or shadow casting, an image into a photosensitive emulsion (photoresist) coated onto the substrate of choice. Today it is the most widely used lithography process in the manufacturing of nano-electronics by the semiconductor industry, a $400 Billion industry worldwide. Optical lithography’s ubiquitous use is a direct result of its highly parallel nature allowing vast amounts of information (i.e., patterns) to be transferred in a very short time. For example, considering the specification of a modern leading edge scanner (150–300-mm wafers per hour and 40-nm two-dimensional pattern resolution), the pixel throughput can be found to be approximately 1.8T pixels per second. Continual advances in optical lithography capabilities have enabled the computing revolution we have undergone over the past 50 years.
关键词： Nano-electronics,Numerical Aperture (NA),Coherence,Resolution,Photoresist,Depth of Focus (DOF),Optical Lithography,Extreme Ultraviolet (EUV),Semiconductor
更新于2025-09-10 09:29:36
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Gallium Oxide || Schottky contacts to β-Ga2O3
摘要： The success of β-Ga2O3 as the wide-bandgap semiconductor platform for ultrahigh efficiency electronic and optoelectronic devices relies on the ability to control the properties of ohmic and rectifying, or Schottky, contacts on this material. This chapter focuses on the current status of research and development of Schottky contacts on β-Ga2O3: the materials and structures used and their corresponding electrical properties.
关键词： Schottky contacts,β-Ga2O3,electronic devices,optoelectronic devices,wide-bandgap semiconductor
更新于2025-09-10 09:29:36
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Advances in Chemical Mechanical Planarization (CMP) || Ultra low-k materials and chemical mechanical planarization (CMP)
摘要： The performance of integrated circuits (ICs) has been driven steadily higher over the past several decades by the twin engines of feature scaling and materials innovation—so much so that steady performance improvement is seen as a necessary aspect of the broader electronics industry. As each technology node shrank linear feature dimensions by around 70%, the required chip area diminished by 50%. This enabled additional features to be added to a chip while maintaining chip size. This halving of chip-size for equivalent functionality has enabled sustained cost reduction, which has been the second feature of the semiconductor industry. The IC can be divided into the transistor section and the interconnect section—each of which has contributed to the improvement in IC performance.
关键词： integrated circuits,chemical mechanical planarization,Ultra low-k materials,CMP,materials innovation,semiconductor devices,IC performance,feature scaling
更新于2025-09-10 09:29:36
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Structural and optical properties of metallic doped Palladium Sulfide thin films
摘要： The Addition of impurities and the nature of substrate are known to change the properties of any deposited thin films. In this work, the influence of doping on the structural and optical properties of PdS thin films grown by chemical bath method has been studied. Aluminum (Al) was used as the dopant for PdS thin films deposited at room temperature. Band gap energy (??g), and other optical parameters were determined from the optical transmission of the film. The estimated energy band gap for the films varied from 1.50 to 1.80 eV. Nanocrystal PdS thin films exhibited a tetragonal structure with average crystallite size of 60 nm. The results obtained prove that doping have profound and superficial effects on optical and structural properties of the deposited PdS thin films.
关键词： Doping,PdS,Optical Properties,Semiconductor,XRD
更新于2025-09-10 09:29:36
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Decorating (001) Dominant Anatase TiO2 Nanoflakes Array with Uniform WO3 Clusters for Enhanced Photoelectrochemical Water Decontamination
摘要： A facile two-step chemical bath deposition (CBD) method has been developed for the preparation of uniformly crystalline anatase WO3/TiO2 array on FTO substrate. The synthesis starts from the hydrothermal growth of TiO2 array in a homogenous HCl aqueous solution containing stabilized titanium isopropoxide, NH4F and acetylacetone (AcAc). Electron microscopy and the XRD analysis suggest the addition of AcAc chelating agent can facilitate the preferential growth of anatase (001) facets that are interconnected and vertically aligned. While (101) dominant TiO2 bipyramid array may form without AcAc. The subsequent decoration of WO3 clusters on TiO2 array is achieved by post-depositing TiO2 array in (NH4)2WO4 aqueous solution followed with a calcination at 450 oC, the resultant WO3/TiO2 array shows a significantly elevated photocurrent performances owing to the high separation efficiency of charge carriers. The enhanced photoelectrocatalytic properties are explained by the efficient charge carrier separation at the heterojunction between WO3 and TiO2. A faster photoelectrochemical degradation of methylene under simulated sunlight further demonstrates the potential usefulness of WO3/TiO2 arrayed photoelectrocatalyst in solar-driven environmental purification and solar fuel synthesis.
关键词： hydrothermal process,WO3,water treatment,TiO2,semiconductor photoelectrocatalysis
更新于2025-09-10 09:29:36