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Metal-Semiconductor-Metal ?μ-Ga2O3 Solar-Blind Photodetectors with a Record High Responsivity Rejection Ratio and Their Gain Mechanism
摘要： In recent years, Ga2O3 solar-blind photodetector (SBPD) has been attached great attention for its potential application in solar-blind imaging, deep space exploration, and confidential space communication, etc. In this work, we demonstrated an ultrahigh performance ε-Ga2O3 metal-semiconductor-metal (MSM) SBPD. The fabricated photodetectors exhibited record-high responsivity and fast decay time of 230 A/W and 24 ms, respectively, compared with MSM-structured Ga2O3 photodetectors reported to date. Additionally, the ε-Ga2O3 MSM SBPD presents ultrahigh detectivity of 1.2×1015 Jones with low dark current of 23.5 pA under the operation voltage of 6 V, suggesting its strong capability of detecting an ultraweak signal. The high sensitivity and wavelength selectivity of the photodetector were further confirmed by the record high responsivity rejection ratio (R250nm/R400nm) of 1.2×105. From the temperature-dependent electrical characteristics in the dark, the thermionic field emission and Poole-Frenkel emission were found to be responsible for the current transport in the low and high electric field regimes, respectively. In addition, the gain mechanism was revealed by the Schottky barrier lowering effect due to the defect states at the interface of metal contact and Ga2O3 or in the bulk of Ga2O3 based on current transport mechanism and density functional theory (DFT) calculation. These results facilitate a better understanding of ε-Ga2O3 photoelectronic devices and provide possible guidance for promoting their performance in future solar-blind detection applications.
关键词： rejection ratio,metal-organic chemical vapor deposition,ε-Ga2O3,responsivity,high-performance,solar-blind photodetector
更新于2025-09-19 17:13:59
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Flexible solar blind Ga2O3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio
摘要： In this work, flexible solar blind Ga2O3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio are demonstrated. The Ga2O3 films are obtained by the RF magnetron sputtering method on flexible polyimide (PI) substrates and the results demonstrate that all the films grown under various temperatures are amorphous. When the incident light wavelength is less than 254 nm, the incident light is effectively absorbed by the Ga2O3 film. By controlling the growth temperature of the material, the responsivity and photo-to-dark current ratio of the corresponding metal-semiconductor-metal photodetectors are significantly improved. At growth temperature of 200 oC, the current under 254 nm illumination obtains 396 nA at voltage of 20 V (corresponding responsivity is 52.6 A/W), the photo-to-dark current ratio is more than 105, and the external quantum efficiency reaches 2.6×10 4 %, which is among the best reported Ga2O3 ultraviolet photodetectors including the devices on the rigid substrates. After the bending and fatigue tests, the flexible detectors have negligible performance degradation, showing excellent mechanical and electrical stability.
关键词： solar blind photodetector,responsivity,photo-to-dark current ratio,Ga2O3,flexible device
更新于2025-09-19 17:13:59
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Fabrication of ?μ-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal
摘要： Owing to the constraint of carrier transport, the dark current is relatively lower in Schottky contacted devices than that in Ohmic contacted devices, leading to a high specific detectivity in photodetectors. In this work, we prepared ε-Ga2O3 thin film by using metal-organic chemical vapor deposition, then constructed a three-pair interdigital ultraviolet solar-blind photodetector with Au electrodes as Schottky contacts. Seen from the results, this photodetector displays an outstanding wavelength selectivity with responsivity of 0.52 A W-1 responding to 250 nm wavelength light. In addition, it shows a photo-to-dark current ratio of 1.82 × 104/6.03 × 102 at 5 V under 40/5 μW cm-2 254 nm light illuminations, respectively, and a low dark current of 1.87 × 10-11 A. Correspondingly, the specific detectivity is 1.67 × 1012 Jones, and the photoresponsivity is 0.198 A W-1/52.54 mA W-1. Overall, ε-Ga2O3 prepared here is certified to be an excellent candidate material to perform high-performance solar-blind detection.
关键词： ε-Ga2O3,high detectivity,Schottky contact,solar-blind photodetector
更新于2025-09-19 17:13:59
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Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga2O3 Thin Films
摘要： A high-performance solar-blind photodetector with a metal–semiconductor–metal structure was fabricated based on amorphous In-doped Ga2O3 thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast rise time (4.9 μs) and a rapid decay time (230 μs). The detection range was broadened compared with an individual Ga2O3 photodetector because of In doping. In addition, the uneven In distribution at different areas in the film results in different resistances, which causes a quasi-Zener tunneling internal gain mechanism. The quasi-Zener tunneling internal gain mechanism has a positive impact on the fast response speed and high responsivity.
关键词： quasi-Zener tunneling effect,fast response,amorphous InGaO thin films,solar-blind photodetector
更新于2025-09-16 10:30:52
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3D Solar‐Blind Ga <sub/>2</sub> O <sub/>3</sub> Photodetector Array Realized Via Origami Method
摘要： A 3D solar-blind photodetector array is realized from amorphous Ga2O3 films grown on polyethylene terephthalate substrates via an origami route. The photodetector cells exhibit a dark current of 0.17 nA, and the peak responsivity is about 8.9 A W?1 at 250 nm with a quantum efficiency of 4450%. The photodetector shows a distinct cut-off wavelength at 268 nm with a solar-blind ratio of more than two orders of magnitude (photocurrent ratio between 250 nm/300 nm). The photodetector cells reveal excellent electrical stability after thousands of bending cycles. All the photodetector cells of the 3D photodetector array have a highly consistent performance. In addition, the device can execute the functions of capturing a real-time light trajectory and identifying multipoint light spatial distribution, which cannot be achieved in all the previously reported 2D solar-blind photodetectors. The results suggest new pathways to fabricate 3D photodetectors from conventional semiconductor films, which may find potential applications in optical positioning, tracking, imaging and communications, etc.
关键词： 3D photodetector,solar-blind photodetector,amorphous Ga2O3,origami
更新于2025-09-11 14:15:04