- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
TiOxNy Thin Film Sputtered on a Fiber Ball Lens as Saturable Absorber for Passive Q-Switched Generation of a Single-Tunable/Dual-Wavelength Er-Yb Double Clad Fiber Laser
摘要： The use of titanium oxynitride (TiOxNy) thin ?lms as a saturable absorber (SA) element for generation of passive Q-switched (PQS) laser pulses, from a linear cavity Er-Yb double-clad ?ber (EYDCF) laser, is demonstrated. Additionally, the deposition of the material as a thin ?lm covering a ?ber micro-ball lens (MBL) structure is reported for the ?rst time. The TiOxNy coating is deposited by a direct current (DC) magnetron-sputtering technique. The MBL is inserted within the laser cavity in a re?ection con?guration, alongside a re?ecting mirror. As a result, the coated ?ber MBL simultaneously acts as a SA element for PQS laser pulses generation and as an interference ?lter for wavelength selection and tuning of the generated laser line. Tunable single-laser emission in a wavelength range limited by dual-wavelength laser generation at 1541.96 and 1547.04 nm is obtained. PQS laser pulses with a repetition rate from 18.67 to 124.04 kHz, minimum pulse duration of 3.57 μs, maximum peak power of 0.359 W, and pulse energy of 1.28 μJ were obtained in a pump power range from 1 to 1.712 W.
关键词： Q-switched ?ber lasers,titanium oxynitride,DC magnetron sputtering,?ber micro-ball lens,saturable absorber materials
更新于2025-09-23 15:21:01
-
Optimized Growth of Gallium Oxide Thin Films Using Different Synthesis Processes
摘要： This paper investigates the optimized sputtering conditions for high quality gallium oxide (Ga2O3) thin films while maintaining a strong uniformity within a specific surface area. The research also analyzes the crystal structure and the morphology of gallium oxide (Ga2O3) thin films. We report a comprehensive investigation of two different types of Ga2O3 synthetization processes: (1) direct deposition using radio frequency (RF) magnetron sputter technique and (2) thermal oxidation of gallium nitride (GaN) samples. A detailed comparison is presented in terms of material characterization, surface analysis and electrical performance for each of the synthetization processes. X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and x-ray diffraction (XRD) are employed to study the gallium oxide (Ga2O3) epi-layers on each of the samples. Based on the analysis, Ga2O3 compound is found on all samples with a binding energy ranging from 21 eV to 21.38 eV. Depending on the synthetization process, the thickness varied from 20 nm to 100 nm for RF sputtering process and a maximum of 400 nm for thermal oxidation method. Additionally, the observations revealed that Ga2O3 is formed on the surface, as well as inside the gallium nitride (GaN) film after thermal oxidation. Crystal features are observed on the surface of each of the samples after annealing treatment while XRD analysis showed the presence of the beta (b) polymorph for the annealed samples. After thorough characterization, radio frequency sputtering technique proved to be superior due to its higher purity level and ability to create polycrystalline structures by adding temperature during deposition.
关键词： UHV RF magnetron sputtering,Gallium oxide,thermal oxidation,characterization
更新于2025-09-23 15:21:01
-
Comprehensive characterization of CIGS absorber layers grown by one-step sputtering process
摘要： We have demonstrated that the use of a one-step sputtering process allowed for the fabrication of copper indium gallium diselenide (CIGS) thin films by RF magnetron sputtering without an additional selenization process. The CIGS thin films deposited at different substrate temperatures were synthesized on soda-lime glass (SLG) substrates using a single quaternary CIGS target. The film composition ratios of ([Cu]/[In]+[Ga]), ([Ga]/[In]+[Ga]), and ([Se]/[Cu]+[In]+[Ga]) were almost consistent with those of the sputtering target. X-ray diffraction (XRD) and Raman results showed that the crystallinity of the CIGS thin films was gradually improved as substrate temperatures increased. Transmission electron microscopy (TEM) showed that the films grown at 600 °C have a columnar structure with the grain size of ~100 nm. In addition, for the CIGS films grown at 600 °C, TEM-EDX analysis revealed that the synchronized fluctuation of the Cu and Se signals was observed in the direction of the film depth, while the In and Ga signals were constant. As a result, the CIGS solar cell made using the film showed a degraded cell efficiency of 2.5%, which might be have been caused by not only Cu-rich and Se-poor compositions but the locally unstable composition in the CIGS films fabricated by one-step sputtering.
关键词： CIGS,Compound semiconductor,One-step sputtering,Quaternary single target
更新于2025-09-23 15:21:01
-
Effect of oxygen vacancy on structural, optical, and photocatalytic properties of ceria films grown by magnetron sputtering deposition
摘要： Cerium oxide is of crucial importance for intrinsic redox reaction, which is attributed to the active sites neighboring oxygen vacancies. However, the role of oxygen vacancy (Ov) on the various properties of ceria ?lms remains to be elucidated. Herein, ceria ?lms were deposited by magnetron sputtering and the e?ect of electric current intensity on the creation of Ov was systematically investigated. X-ray photoelectron spectroscopy (XPS) results show that the Ce4+ concentration decreases with the increase of current intensity, which demonstrates that Ov can be created and tuned during ?lm deposition by controlling electric current intensity. The ?lm fabricated by 6 A current intensity has 42% Ce4+, approaching that of rhombohedral-Ce7O12, which is a stabilized bulk phase ceria. X-ray di?raction patterns reveal that 6 A ?lm shows mixed crystalline phases with the majority of peaks very close to rhombohedral-Ce7O12, while 1 A, 2 A, and 4 A ceria ?lms show simple crystalline phase. Raman analysis presents that dioxygen species are heavily absorbed on the surface of 6 A ?lm with more active sites on di?erent crystalline surfaces, which is con?rmed by photocatalytic degradation of Methylene Blue. The calculated bandgap by DFT (density functional theory) + U is consistent with that obtained from Tauc plots curves. This work demonstrates that Ov plays an important role on the properties of the ceria ?lm.
关键词： XPS,Raman,Oxygen vacancy,Magnetron sputtering,Cerium oxide
更新于2025-09-23 15:21:01
-
The effect of Zn3N2 phase decomposition on the properties of highly-doped ZnO: Al, N films
摘要： Study of Al-N simultaneous doping and thermal annealing influence on the properties of ZnO films is very important for achievement as p-type conductivity in the films as for improvement the performance of ZnO-based ultraviolet detectors. Highly-doped ZnO:Al,N films containing the Zn3N2 phase (ZnO:Al,N-Zn3N2) were grown on Si substrates by magnetron sputtering using a layer-by-layer growth technique. Our work presents a comparative study of the structure, optical and electronic properties of highly-doped as-grown and annealed ZnO:Al,N films. It was shown that the thermal annealing of ZnO:Al,N-Zn3N2 film at atmospheric conditions allows to decompose the Zn3N2 phase. The features of this phenomena on the properties of ZnO:Al,N films were investigated and discussed in detail by using X-ray diffraction, energy dispersive X-ray analysis, Raman scattering, photoluminescence, X-ray photoelectron spectroscopy and X-ray emission spectroscopy.
关键词： Radio-frequency magnetron sputtering,Zinc oxide,Nitrogen-aluminum doping,Photoluminescence,X-ray photoelectron spectroscopy,Thin films,X-ray diffraction,Raman scattering
更新于2025-09-23 15:21:01
-
Surface characterization of clean SrTiO <sub/>3</sub> (100) substrates by x-ray photoelectron spectroscopy
摘要： The authors analyze the x-ray photoelectron spectra of SrTiO3(100) (STO) substrates to clarify the electronic structure characteristics induced by a sputter–anneal procedure. The survey spectra, the valence band spectra, and the relevant core level spectra, i.e., Sr 3s, Sr 3p, Sr 3d, Sr 4s, Sr 4p, Ti 2p, Ti 3s, Ti 3p, O 1s, and O 2s along with their satellite structures, of both pristine and sputtered and annealed STO have been measured. A comparison of spectra reveals the appearance of new features in the Ti 2p spectra of sputtered and annealed STO, corresponding to Ti3+ states and gap states near the Fermi energy. The presence of Ti3+ states points to the formation of a two-dimensional electron system at the STO surface generated by Ar+ sputtering and annealing in vacuum. Furthermore, the sputter-annealed surface shows only minor carbon contamination as compared to that of the pristine substrate.
关键词： XPS,transition metal oxide,sputtering,2DES,strontium titanium oxide,core level,single crystal
更新于2025-09-23 15:21:01
-
The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
摘要： Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material, which creates new possibilities for surface engineering. Ions can, in contrast to atoms, be easily controlled with regard to their energy and direction, which is beneficial for thin film growth. Furthermore, ions can also increase the trapping probability of material on nanoparticles growing in the gas phase. The pulsed sputter ejection of source material also has other consequences: the material in the plasma and the material arrival on the growth surface will fluctuate strongly resulting in high level of supersaturation during pulse-on time. In this paper, an overview of the generation and properties of highly ionized pulsed plasmas is given. In addition, the use and importance of these types of discharges in the fields of thin-film and nanoparticle growth are also summarized.
关键词： HiPIMS,HPPMS,sputtering,IPVD,thin films,nanoparticle synthesis
更新于2025-09-23 15:21:01
-
[Lecture Notes in Networks and Systems] Advances in Engineering Research and Application Volume 63 (Proceedings of the International Conference, ICERA 2018) || Comparison Between DC and HiPIMS Discharges. Application to Nickel Thin Films
摘要： The study deals with a comparison between Direct Current (DC) and High Power Impulse Magetron Sputtering (HiPIMS) processes. We have ?rst highlighted that the plasma of the DC discharge is composed mainly of gaseous species whereas the HiPIMS discharge leads to a plasma dominated by metal vapor and characterized by the presence of charged species of strong and low energy. For thin nickel (Ni) ?lms, we have found the the use of HiPIMS produce denser and better crystallized layers improving the uniformity of the coating on substrates with complex geometries.
关键词： Nickel thin ?lms,HiPIMS,Magnetron sputtering
更新于2025-09-23 15:21:01
-
Sputtered cobalt doped CuO nano-structured thin films for photoconductive sensors
摘要： Pure and cobalt (Co) doped CuO thin films have been deposited by DC and AC reactive magnetron sputtering technique. The doping ratio has been controlled by the RF power of the AC sputtering unit. The sputtering power ranges from 0 to 50 W. The crystal structure of the films has been identified by X-ray diffraction. One of the peaks has been shifted toward the high diffraction angle. Energy dispersive analysis shows cationic deficiency of the pure and doped samples. Morphology of the films has been investigated by atomic force microscopy. Film roughness decrease with the increase of sputtering power. Spectrophotometry studies reveal that films darken with the increase of sputtering power. The current–voltage curves show Ohmic contacts and an enhancement in the conductivity with the increase of Co concentrations. Photoresponse measurements have shown that the film doped at 50 W is the best photodetector sensor.
关键词： photoconductive sensors,thin films,magnetron sputtering,Co doped CuO
更新于2025-09-23 15:21:01
-
Preparation and characterization of lead zirconate titanate thin films grown by RF magnetron sputtering for pyroelectric infrared detector arrays
摘要： One of the challenges in fabricating pyroelectric infrared (PIR) detector arrays using microelectromechanical system (MEMS) technique lies in finding an optimal growth method of sensing thin films. In this study, lead zirconate titanate (PbZr0.3Ti0.7O3, PZT) thin films were successfully prepared on Pt/TiO2/Si3N4/SiO2/Si substrates by RF magnetron sputtering. The structure, morphology and electrical properties of the films annealed at different temperatures were investigated. PZT thin films deposited at a working pressure of 3.0 Pa with an Ar/O2 gas flow ratio of 80/20 and annealed at 700 °C exhibited smooth surface and excellent dielectric, ferroelectric and pyroelectric properties. The dielectric constant and the loss tangent of the films are 500 and 0.018 at 1 kHz, respectively. The remnant polarization (Pr) and the coercive field (Ec) of the films are 33 μC cm?2 and 42 kV cm?1, respectively. The pyroelectric coefficient of the films is 0.033 μC cm?2 K?1. The value of the figure of merit of detectivity (FD) of PZT thin films reaches up to 1.29 × 10?5 Pa?1/2, which indicates that the films have met the requirements for sensitive layers utilized in pyroelectric infrared detector arrays.
关键词： RF magnetron sputtering,Pyroelectric infrared detector arrays,PZT thin films
更新于2025-09-23 15:21:01