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The Implementation of Fundamental Digital Circuits With ITO-Stabilized ZnO TFTs for Transparent Electronics
摘要： In this paper, several fundamental pseudo-CMOS digital circuits with n-type indium tin oxide-stabilized ZnO thin-film transistors (TFTs) were implemented and investigated. The optical transmittance of circuits varied from 77% to 92% throughout the visible wavelength band. Electrically, the operation frequency of inverters, nor gates, nand gates, D latches, and D flip flops were all found to exceed 10 kHz with a supply voltage of 10 V. Besides, 13-stage ring oscillators could be operated at 42 kHz with a propagation delay time of 0.92 μs when the supply voltage was set as 20 V. Among the state-of-the-art transparent designs, these proposed circuits based on the ITO-stabilized ZnO TFTs exhibited high-speed performance, which were promising as building blocks for transparent electronics with moderate frequency requirements.
关键词： transparent electronics,Digital circuits,indium tin oxide-stabilized ZnO,thin-film transistors (TFTs),ring oscillator (RO)
更新于2025-09-23 15:22:29
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Transparent Electronics Using One Binary Oxide for All Transistor Layers
摘要： A novel process is developed in which thin film transistors (TFTs) comprising one binary oxide for all transistor layers (gate, source/drain, semiconductor channel, and dielectric) are fabricated in a single deposition system at low temperature. By simply changing the flow ratio of two chemical precursors, C8H24HfN4 and (C2H5)2 Zn, in an atomic layer deposition system, the electronic properties of the binary oxide (HfxZn1?xO2?δ or HZO) are tuned from conducting, to semiconducting, to insulating. Furthermore, by carefully optimizing the properties of the various transistor HZO layers, all-HZO thin film transistors are achieved with excellent performance on both glass and plastic substrates. Specifically, the optimized all-HZO TFTs show a saturation mobility of ≈17.9 cm2 V?1 s?1, low subthreshold swing of ≈480 mV dec?1, high Ion/Ioff ratio of >109, and excellent gate bias stability at elevated temperatures. In addition, all-HZO inverters with high DC voltage gain (≈470), and all-HZO ring oscillators with low stage delay (≈408 ns) and high oscillation frequency of 245 kHz are demonstrated. This approach presents a novel, simple, high performance, and cost-effective process for the fabrication of indium-free transparent electronics.
关键词： transparent multilayer semiconducting channel,transparent electronics,transparent oxide contacts,thin film,transistors,transparent dielectric oxides
更新于2025-09-23 15:21:21
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Wireless phototherapeutic contact lenses and glasses with red light-emitting diodes
摘要： Light-mediated therapeutics have attracted considerable attention as a method for the treatment of ophthalmologic diseases, such as age-related macular degeneration, because of their non-invasiveness and the effectiveness to ameliorate the oxidative stress of retinal cells. However, the current phototherapeutic devices are opaque, bulky, and tethered forms, so they are not feasible for use in continuous treatment during the patient’s daily life. Herein, we report wireless, wearable phototherapeutic devices with red light-emitting diodes for continuous treatments. Red light-emitting diodes were formed to be conformal to three-dimensional surfaces of glasses and contact lenses. Furthermore, fabricated light-emitting diodes had either transparency or a miniaturized size so that the user’s view is not obstructed. Also, these devices were operated wirelessly with control of the light intensity. In addition, in-vitro and in-vivo tests using human retinal epithelial cells and a live rabbit demonstrated the effectiveness and reliable operation as phototherapeutic devices.
关键词： wearable healthcare,phototherapies,red light-emitting diodes,transparent electronics
更新于2025-09-12 10:27:22
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Cross‐Bar SnO <sub/>2</sub> ‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity
摘要： An cross-bar structure is employed to design a transparent p-n junction-based photodetector. The device consisting of aligned n-SnO2 and p-NiO nanofibers is prepared via a mature electrospinning process that is suitable for commercial applications. It exhibits a high detectivity of 2.33 × 1013 Jones under 250 nm illumination at ?5 V, outperforming most state-of-art SnO2-based UV photodetectors. It is also endowed with a self-powered feature due to a photovoltaic effect from the p-n junction, resulting in a photocurrent of 10?10 A, responsivity of 30.29 mA W?1 at 0 V bias, and detectivity of 2.24 × 1011 Jones at 0.05 V bias. Moreover, the device is highly transparent (over 90% toward visible light) due to the wide band gap of photoactive materials and well-designed cross-bar fiber structure. Additionally, an n-SnO2-p-ZnO:Ag (Ag doped ZnO) self-powered UV photodetector is fabricated that shows good performance and give another example of the use of the cross-bar structure.
关键词： p-n junctions,self-powered photodetectors,transparent electronics
更新于2025-09-11 14:15:04
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Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering pressure dependency
摘要： We found that the write-once-read-many-times (WORM, inerasable)-to-rewritable (erasable) transition phenomenon results from the different structure of the filament, which is determined by the grain orientations of the deposited films. The conduction mechanism of this switching transition, and its impact on the synaptic behavior in various ZnO nanostructure, is also discussed. Furthermore, our WORM devices have programmable physical damage function that can be exploited for use in security systems against data theft, hacking, and unauthorized use of software/hardware. This work proposes ZnO-based non-volatile memory for invisible electronic applications and gives valuable insight into the design of WORM and rewritable memories.
关键词： ZnO,sputtering,transparent electronics,memristor,write-once-read-many-times
更新于2025-09-11 14:15:04
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Transparent p-Cu0.66Cr1.33O2/n-ZnO heterojunction prepared in a five-step scalable process
摘要： Transparent and electrical conducting p-type off-stoichiometric copper–chromium oxide thin films were used to build p-Cu0.66Cr1.33O2/n-ZnO heterojunctions. The junctions were fabricated in a novel and simple five step process including metal organic chemical vapour deposition, atomic layer deposition, chemical wet etching, and optical lithography. One last step of thermal annealing, with varying temperatures of 650 and 700 °C, is added in order to tune the electrical properties of delafossite and consequently the electrical features of p–n junctions. This work was developed to address the lack of transparent and industrially scalable rectifying p–n junctions that can open multiple application paths in transparent electronics. A competitive ideality factor η of 6.6 and a transmittance in the visible range of 50% were achieved. An understanding of the electronic response of junctions is presented herein as well as a deepening comprehension of the physical properties of materials, with the bands alignment and the Fermi level tuning.
关键词： Atomic layer deposition,Optical lithography,Thermal annealing,Delafossite,Metal organic chemical vapour deposition,p-Cu0.66Cr1.33O2/n-ZnO heterojunctions,Transparent electronics,Chemical wet etching,Fermi level tuning
更新于2025-09-10 09:29:36
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Switchable Two-Terminal Transparent Optoelectronic Devices Based on 2D Perovskite
摘要： A switch-like structure that can be turned on/off with photons is considered necessary for most optoelectronic devices, such as phototransistors and photodetectors. However, developing a single device whose photoresponse can be modulated without changing the measuring voltage or illuminating light is challenging, and yet to be achieved. In this work, a conceptually new 2D perovskite-based fully transparent two-terminal optoelectronic device that can be turned on/off with a short electric pulse without any further change in the measuring conditions, such as the illuminating photon or applied voltage is proposed and demonstrated. The device exhibits loop opening in the current–voltage characteristics, which is utilized to design the novel electrically triggered optoelectronic device. The photocurrent of the device can be modulated from zero to 2.2 mA using a simple voltage pulse. Further, a responsivity of 550 mA W?1 and detectivity of 2.16 × 1010 Jones are measured in the on-state. Potentially, the approach opens a new avenue for the design of two-terminal advanced highly transparent optoelectronic devices, such as smart windows and transparent image sensors.
关键词： optoelectronics,2D perovskite,transparent electronics,two-terminal devices,memristors
更新于2025-09-09 09:28:46
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Enabling thin-film transistor technologies and the device metrics that matter
摘要： The field-effect transistor kickstarted the digital revolution that propelled our society into the information age. One member of the now large family of field-effect devices is the thin-film transistor (TFT), best known for its enabling role in modern flat-panel displays. TFTs can be used in all sorts of innovative applications because of the broad variety of materials they can be made from, which give them diverse electrical and mechanical characteristics. To successfully utilize TFT technologies in a variety of rapidly emerging applications, such as flexible, stretchable and transparent large-area microelectronics, there are a number of metrics that matter.
关键词： field-effect transistor,digital revolution,flexible electronics,large-area microelectronics,thin-film transistor,stretchable electronics,flat-panel displays,TFT,transparent electronics
更新于2025-09-04 15:30:14
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Reference Module in Materials Science and Materials Engineering || Film Deposition Processes Based on Eco-Friendly, Flexible, and Transparent Materials for High-Performance Resistive Switching
摘要： In 1971, the term memristor, the fourth fundamental element besides resistor, capacitor, and inductor was coined by Dr. Leon Chua. However, it was only in 2008 that Stanley Williams of Hewlett-Packard (HP) realized its existence for a device using TiO2 as the switching material and platinum (Pt) as electrodes. A two-terminal metal-insulator-metal (MIM) device has the ability of reversible resistive switching (RS) between low-resistance state (LRS) and high-resistance state (HRS) when an excitation voltage or current is applied. SET is de?ned to be a transition from HRS to LRS and corresponding voltage as Vset. On the other hand, RESET is de?ned as the transition from LRS to HRS and corresponding voltage as Vreset. Resistances in LRS and HRS are represented as RLRS and RHRS, respectively.
关键词： Transparent Electronics,Memristor,Eco-Friendly Materials,Film Deposition,Resistive Switching,Flexible Electronics
更新于2025-09-04 15:30:14