- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Nitrogen-doped graphene quantum dots: Optical properties modification and photovoltaic applications
摘要： In this work, we utilize a bottom-up approach to synthesize nitrogen self-doped graphene quantum dots (NGQDs) from a single glucosamine precursor via an eco-friendly microwave-assisted hydrothermal method. Structural and optical properties of as-produced NGQDs are further modified using controlled ozone treatment. Ozone-treated NGQDs (Oz-NGQDs) are reduced in size to 5.5 nm with clear changes in the lattice structure and ID/IG Raman ratios due to the introduction/alteration of oxygen-containing functional groups detected by Fourier-transform infrared (FTIR) spectrometer and further verified by energy dispersive X-ray spectroscopy (EDX) showing increased atomic/weight percentage of oxygen atoms. Along with structural modifications, GQDs experience decrease in ultraviolet–visible (UV–vis) absorption coupled with progressive enhancement of visible (up to 16 min treatment) and near-infrared (NIR) (up to 45 min treatment) fluorescence. This allows fine-tuning optical properties of NGQDs for solar cell applications yielding controlled emission increase, while controlled emission quenching was achieved by either blue laser or thermal treatment. Optimized Oz-NGQDs were further used to form a photoactive layer of solar cells with a maximum efficiency of 2.64% providing a 6-fold enhancement over untreated NGQD devices and a 3-fold increase in fill factor/current density. This study suggests simple routes to alter and optimize optical properties of scalably produced NGQDs to boost the photovoltaic performance of solar cells.
关键词： photovoltaics,optical properties,ozone treatment,nitrogen-doped graphene quantum dots,solar cells
更新于2025-11-19 16:56:42
-
Non-radiation creation of complex centers in wide-gap oxide crystals
摘要： It is shown that complex aggregate centers of oxygen divacancy type (F2 centers) and interstitial aluminum type near the anion vacancy (Ali+) are formed in anion-deficient crystals of corundum (α-Al2O3-δ) and beryllium oxide (BeO1-δ) under thermo-optical treatment (TOT). These centers are similar to those created in stoichiometric α-Al2O3 and BeO crystals under neutron irradiation. It is important to note that thermal stability of the TOT-created complex centers is higher than that of similar neutron-induced centers. It is also established that the probability of their formation is related to the temperature of the TOT, the wavelength of the stimulating light, and the initial anionic deficiency manifested as F+ and F centers (anion vacancies with one and two electrons, respectively).
关键词： Formation of complex defects,Wide-gap anion-deficient oxide crystals,Thermoluminescence,Optical absorption,Thermostability of complex defects,Thermo-optical treatment
更新于2025-11-19 16:56:35
-
RbF post deposition treatment for narrow bandgap Cu(In,Ga)Se2 solar cells
摘要： Multi-junction solar cells are known to have a considerably increased efficiency potential over their typical single junction counterparts. In order to produce low cost and lightweight multi-junction devices, the availability of suitable narrow (<1.1 eV) bandgap bottom cells is paramount. A possible absorber for such a bottom cell is the Cu(In,Ga)Se2 (CIGS) compound semiconductor, one of the most efficient thin film materials to date. In this contribution we report on the RbF post deposition treatment of narrow bandgap CIGS absorbers grown with a single bandgap grading approach. We discuss the necessary deposition conditions and the observed improvements on solar cells performance. A certified record efficiency of 18.0 % for an absorber with 1.00 eV optoelectronic bandgap is presented and its suitability for perovskite/CIGS tandem devices is shown.
关键词： Post deposition treatment,Narrow bandgap,Tandem solar cells,Thin film solar cells,photovoltaics,Rubidium fluoride,Copper indium gallium selenide
更新于2025-11-14 17:28:48
-
[IEEE 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC) - Washington, DC (2017.6.25-2017.6.30)] 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Interface Effects of Alkali Treatment on Cu-Rich Thin Film Solar Cells
摘要： CuInSe2 absorbers grown under Cu-excess have better current collection compared to those grown as Cu-poor. However, cells based on Cu-excess absorbers show lower efficiency due to a worse absorber-buffer interface where the interface recombination is the dominant recombination path. In this paper, potassium fluoride post-deposition treatment is used to improve this interface, as evidenced by an activation energy of the main recombination path close to the band gap energy. The treatment also succeeded in eliminating the 200-meV step observed in admittance measurements; a main characteristic of Cu-excess CuInSe2 cells.
关键词： admittance measurements,Cu-excess,interface recombination,potassium fluoride post-deposition treatment,CuInSe2
更新于2025-11-14 17:28:48
-
Ellipsometric study on optical properties of hydrogen plasma-treated aluminum-doped ZnO thin film
摘要： Aluminum-doped zinc oxide (AZO) thin films were prepared by radio frequency (RF) sputtering at room temperature, and then post-treated by hydrogen (H2) plasma at different durations. After H2 plasma treatment under the condition of 10 W, 200 °C and 3.0 Hours, the resistivity showed a dramatically decrease from 1.6 Ω cm to 3.4 × 10?3 Ω cm, while the transmittance at the wavelength of 550 nm was improved from 90.5% to 96.0%. The optical constants of H2 plasma-treated AZO thin films were detailed characterized by a varied angle spectroscopic ellipsometer. The results show that the refractive index n decreases in the entire measured wavelength range of 350–1100 nm, while the extinction coefficient k decreases in the short wavelength range and changes negligibly at the long wavelength range. These results can provide guidelines for the design and optimization of AZO thin film-based optoelectronic applications.
关键词： Resistivity,Spectroscopic ellipsometer,Transmittance,Optical constants,Hydrogen plasma treatment,Aluminum-doped zinc oxide
更新于2025-11-14 17:03:37
-
Ups and Downs of Water Photodecolorization by Nanocomposite Polymer Nanofibers
摘要： Given the exponentially expanding water pollution causing water scarcity, there is an urgent need for operative nanotechnological systems that can purify water, with insignificant energy consumption, and rapidly. Here, we introduce a nanocomposite system based on TiO2 nanoparticles (NPs) and PES nanofibers (NFs) that can adsorb and then photodecompose organic water pollutants such as dye molecules. We evaluate pros and cons of this system with respect to its purification efficiency and structural properties that can be impacted by the photocatalytic activity of the nanofillers. While the material is superhydrophilic and able to remove 95% methylene blue (MB) from water via adsorption/photodecomposition, its thermomechanical properties decline upon UV irradiation. However, these properties still remain at the level of the neat NFs. The removal behavior is modeled by the first- and second-order kinetic models from the kinetic point of view. The nanocomposite NFs’ removal behavior complies much better with the second-order kinetic model. Overall, such feedbacks implied that the nanocomposite can be effectively applied for water treatment and the structural properties are still as reliable as those of the neat counterpart.
关键词： nanofiber,photodegradation,dye removal,water treatment,photocatalysis
更新于2025-11-14 17:03:37
-
Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGe <sub/><i> <i>n</i> </i> </sub> S <sub/> 2( <i> <i>n</i> </i> +1) </sub> ( <i>n</i> = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications
摘要： AgGaGenS2(n+1) crystal is a series of quaternary for mid-IR laser applications of nonlinear optical materials converting a 1.064 μm pump signal (Nd:YAG laser) to 4?11 μm laser output, but only AgGaGeS4 has attracted the most attention, remaining the other promising AgGaGenS2(n+1) crystal whose physicochemical properties can be modulated by n value. In this work, AgGaGenS2(n+1) (n = 2, 3, 4, and 5) polycrystals are synthesized by vapor transport and mechanical oscillation method with di?erent cooling processes. High-resolution X-ray di?raction analysis and re?nement have revealed that all the four compounds are crystallized in the noncentrosymmetric orthorhombic space group Fdd2, resulting in the excellent nonlinear optical property, and the distortion of tetrahedron with the variation of n value causes the discrepancy of physicochemical property. Besides, using the modi?ed Bridgman method, AgGaGenS2(n+1) single crystals with 15 mm diameter and 20?40 mm length have been grown. We have discussed the structure and composition of AgGaGenS2(n+1) by XPS spectra and analyzed the three kinds of vibration modes of tetrahedral clusters by the Raman spectra. The Hall measurement indicates that the AgGaGenS2(n+1) single crystals are p-type semiconductor, and the carrier concentration decreases with the increasing n value. All the transmittances of as-grown AgGaGenS2(n+1) samples exceeds 60% in the transparent range, especially the transmittance of AgGaGe2S6, is up to 70% at 1064 nm, and the band gap of as-grown crystal increases from 2.85 eV for AgGaGe2S6 to 2.92 eV for AgGaGe5S12. After a thermal annealing treatment, the absorptions at 2.9, 4, and 10 μm have been eliminated, and the band gap changed into the range of 2.89?2.96 eV.
关键词： Hall measurement,nonlinear optical materials,thermal annealing treatment,vapor transport,AgGaGenS2(n+1),Bridgman method,Raman spectra,mid-IR laser applications,XPS spectra,mechanical oscillation method
更新于2025-11-14 15:27:09
-
Synthesis of near unity photoluminescence CdSeTe alloyed Quantum Dots
摘要： Quantum dots (QD) tend to exhibit low photoluminescence (PL) properties due to long hanging ligands on their surface and steric barriers resulting therefrom. On the other hand, in order to be used in QD LED and QDSSC technologies, highly intense PL characteristics and PL lifetime are required respectively. Therefore, this study focuses on increasing the PL QY and PL lifetime of CdSeTe alloy QDs. To achieve this aim, CdSeTe alloy QDs synthesized by organometallic method were treated with different mass % (m/m) chloride solution. The PL Quantum Yield (PL QY) of CdSeTe alloy QDs, which was 13.2 ± 2.0% before treatment, increased to 97.4 ± 2.0% after treatment with 60% CdCl2 solution approaching to almost unity value. In addition to the increase in PL QY, PL lifetime increased from 28 ns to 33 ns with chloride treatment. However, thanks to surface passivation, the time to fall to half the value of PL QY for treated CdSeTe(Cl) QDs under oxygen exposure was increased from 10 h to 64 h. In the study, the absorbance and emission characterizations of CdSeTe alloy QDs treated with chloride and untreated, were presented.
关键词： Quantum dot,Photo luminescence,CdSeTe,Chloride treatment,Quantum yield
更新于2025-11-14 15:24:45
-
Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors
摘要： The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annealing method is proposed to remove organic molecules from the channel layer and to improve the properties of the patterned films. The different interfaces between the insulation layers, channel layers, and drain/source electrodes were processed by argon plasma. This was done to improve the printing accuracy of the patterned InGaZnO channel layers, drain, and source electrodes, as well as to optimize the printing thickness of channel layers, reduce the defect density, and, ultimately, enhance the electrical performance of printed TFT devices.
关键词： thin-film transistor,annealing,plasma treatment,ink-jet printing
更新于2025-10-24 16:37:46
-
Wafer-scale Fabrication of Nitrogen-doped Reduced Graphene Oxide with Enhanced Quaternary-N for High-Performance Photodetection
摘要： We demonstrated a simple and scalable fabrication route of nitrogen-doped reduced graphene oxide (N-rGO) photodetector on 8-inch wafer-scale. The N-rGO was prepared through in-situ plasma-treatment in an acetylene-ammonia atmosphere to achieve n-type semiconductor with substantial formation of quaternary-N substituted into the graphene lattice. The morphology, structural, chemical composition and electrical properties of the N-rGO was carefully characterized and being used for the device fabrication. The N-rGO devices were fabricated in a simple metal-semiconductor-metal (MSM) structure with unconventional metal-on-bottom configuration to promote high-performance photodetection. The N-rGO devices exhibited enhanced photoresponsivity as high as 0.68 A W?1 at 1.0 V, which is about two orders of magnitude higher compared to a pristine graphene and wide-band photo-induced response from visible to near-infrared (NIR) region with increasing sensitivity in the order of 785 nm, 632.8 nm and 473 nm excitation wavelengths. We also further demonstrated a symmetric characteristic of photo-induced response to any position of local laser excitation with respect to the electrodes. The excellent features of wafer-scale N-rGO devices suggest a promising route to merge the current silicon technology and two-dimensional materials for future optoelectronic devices.
关键词： photodetector,plasma treatment,quaternary-N,wafer-scale fabrication,Nitrogen-doped reduced graphene oxide
更新于2025-09-23 15:23:52