研究目的
Investigating the effective minority carrier lifetime as an indicator for potential-induced degradation in p-type single-crystalline silicon photovoltaic modules.
研究成果
The study concludes that the effective minority carrier lifetime (τeff) measurements by the μ-PCD technique can be a good indicator to inspect PID-affected PV modules. A great decrease in τeff was observed in the PID-affected regions, confirming the excess non-radiative recombination centers in that region. This suggests that τeff from the μ-PCD method can be an effective indicator to judge whether PID phenomenon has occurred.
研究不足
The study acknowledges the complexity of measuring carrier lifetime in solar cells with a p–n junction and silver (Ag) fingers on the surface. The presence of Ag fingers can reflect the microwave, leading to a reduction in the detected intensity and potentially affecting the accuracy of τeff measurements.
1：Experimental Design and Method Selection:
The study employed the microwave photoconductance decay (μPCD) method to measure the effective minority carrier lifetime (τeff) in different regions of solar cells. Electroluminescence (EL), lock-in-thermography, and dark and light current–voltage (I–V) measurements were also conducted for complementary analysis.
2：Sample Selection and Data Sources:
A variety of sc-Si PV modules were prepared, including a mini-module with a commercially available p-type sc-Si solar cell and a 12-cell module with a commercially available p-type sc-Si solar cell.
3：List of Experimental Equipment and Materials:
The μ-PCD measurement system from Semilab (WT-1000B), InGaAs camera (model: Xeva-2.5-320, Xenics nv), InSb camera using THEMOS-1100L system (Hamamatsu Photonics K.K.), and a climate chamber for PID acceleration tests.
4：5-320, Xenics nv), InSb camera using THEMOS-1100L system (Hamamatsu Photonics K.K.), and a climate chamber for PID acceleration tests.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: PID was provoked by biasing a voltage of ?1000 V to the modules. The modules were subjected to the PID acceleration test for several hours at 85 °C and relative humidity of 85%. Lifetime measurements on the wafers, solar cells, and PID-affected PV modules were carried out using the μ-PCD measurement system.
5：5%. Lifetime measurements on the wafers, solar cells, and PID-affected PV modules were carried out using the μ-PCD measurement system.
Data Analysis Methods:
5. Data Analysis Methods: The transient decay of the laser-excited excess carriers was measured point-by-point by microwave reflection. The time at which the signal intensity becomes 1/e was defined as τeff.
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