研究目的
To investigate the spectral response of each subcell in monolithic triple-junction GaAs photovoltaic devices and understand the effects of luminescent coupling and shunt resistance on their performance.
研究成果
The spectral response curves of each subcell in monolithic triple-junction GaAs photovoltaic devices were successfully obtained, showing current matching under simulated solar illumination. The power-dependent spectral responses under laser illumination were explained by the top GaAs subcell's slightly lower shunt resistance and the effects of luminescent coupling.
研究不足
The study is limited by the complexity of multijunction GaAs photovoltaic devices, including the coupling effects among subcells and the potential for artifacts in EQE measurements due to electronic coupling or luminescent coupling.
1：Experimental Design and Method Selection:
The study involved fabricating a triple-junction GaAs solar cell using solid-source molecular beam epitaxy (MBE) and measuring its spectral response under simulated solar and laser illumination conditions.
2：Sample Selection and Data Sources:
The samples were triple-junction GaAs solar cells grown on a p+-GaAs substrate with different thicknesses for the upper, middle, and lower p-GaAs absorption layers.
3：List of Experimental Equipment and Materials:
Equipment included a Xe/halogen dual-light-source solar simulator, lasers with wavelengths of 405, 660, and 785 nm, and a molecular beam epitaxy system. Materials included GaAs, In
4：48Ga52P, and AlGaAs layers. Experimental Procedures and Operational Workflow:
The spectral response was measured under optical and voltage bias conditions to determine the external quantum efficiency (EQE) of each subcell. Current-voltage characteristics were also measured.
5：Data Analysis Methods:
The photocurrent densities were calculated from the EQE spectra and compared with the measured current-voltage characteristics to analyze the performance of the subcells.
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