研究目的
Investigating the design and fabrication of ultra-short cavity quantum well lasers for high-speed data transmission applications.
研究成果
Ultra-short cavity FP lasers based on InP substrate were fabricated, demonstrating mW-class output and 25Gb/s operation at elevated temperatures. The simplicity of the epitaxial structure positions FP lasers as a low-cost solution for fiber networks, with high-speed modulation enhancing their competitiveness against more expensive alternatives.
研究不足
The rise of series resistance in ultra-short cavity devices can cause extra heating, leading to loss of gain and modulation speed, and eventual worse reliability of the devices.
1：Experimental Design and Method Selection:
The study involves the design and fabrication of Fabry-Perot quantum well lasers with ultra-short cavities for high-speed operation. The methodology includes epitaxial wafer growth, dry-etching for facet formation, and dielectric coating for mirror reflectivity adjustment.
2：Sample Selection and Data Sources:
The samples are InAlGaAs quantum well lasers with cavity lengths of 25?m and 50?m. Data is collected from DC and high-speed characterization tests.
3：List of Experimental Equipment and Materials:
Metal-organic chemical vapor deposition system (MOCVD), inductively coupled plasma (ICP) system, BisbenzoCycloButane (BCB) for planarization, and various dielectric and metal layers for facet coating and contact formation.
4：Experimental Procedures and Operational Workflow:
The process includes wafer growth, dry-etching for facet formation, dielectric isolation, metal deposition for back reflector, planarization with BCB, lapping for n-metal deposition, and cleaving for front facet formation.
5：Data Analysis Methods:
The analysis involves measuring threshold currents, output power, series resistance, small signal S21, relaxation resonant frequency, and eye diagrams for modulation effectiveness.
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