研究目的
Investigating the performance degradation of the germanium bottom cell of GaInP/GaAs/Ge triple-junction solar cells under 1 MeV electron irradiation using temperature-dependent photoluminescence measurements.
研究成果
The study identified intrinsic and radiation-induced defects in the Ge bottom cell, with defects at Ec (cid:1) 0.37 eV and Ec (cid:1) 0.12 eV being the main causes of performance degradation. The findings contribute to understanding the degradation mechanisms in triple-junction solar cells under electron irradiation.
研究不足
The study focuses on the effects of 1 MeV electron irradiation and may not cover other types of radiation or higher energy levels. The analysis is limited to the temperature range of 10–300 K.
1：Experimental Design and Method Selection:
Temperature-dependent photoluminescence measurements were conducted on unirradiated and irradiated Ge bottom cells to analyze the effects of electron irradiation.
2：Sample Selection and Data Sources:
GaInP/GaAs/Ge triple-junction solar cells with specific doping levels were used.
3：List of Experimental Equipment and Materials:
A 1064 nm infrared solid-state laser, grating monochromator, PbS photodetector, lock-in amplifier, closed-cycle cryogenic refrigerator (ARS-4HW), and digital thermometer controller (Lake Shore, 355 Temperature controller).
4：Experimental Procedures and Operational Workflow:
PL spectra were measured from 10 to 300 K, with the temperature controlled in steps of 10 K.
5：Data Analysis Methods:
The PL intensity data were analyzed to identify thermal quenching behaviors and defect levels.
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