研究目的
Investigating the thermal activation of boron- and phosphorus-doped amorphous silicon layers and their contribution to improved efficiency in hydrogenated amorphous silicon solar cells.
研究成果
Thermal activation of doped layers in a-Si:H solar cells leads to improved efficiency, with optimal performance observed at an annealing temperature of 150°C. Different equilibrium temperatures for p- and n-type doped a-Si:H materials were identified, influencing the activation process and subsequent efficiency improvements.
研究不足
The study notes that photovoltaic parameters deteriorate at annealing temperatures exceeding 150°C, suggesting a limitation in the thermal activation process. Further research is needed to understand the mechanisms behind this degradation.
1：Experimental Design and Method Selection:
The a-Si:H solar cells were fabricated using the CCP-PECVD method, featuring a PIN structure.
2：Sample Selection and Data Sources:
Solar cells were deposited on textured Asahi SnO2 substrates, with ITO/Ag back contacts defining a solar cell area of
3：126 cmList of Experimental Equipment and Materials:
Equipment includes CCP-PECVD for fabrication, Oriel-Apex Xe lamp for J-V characteristics testing, and in-house custom-built setups for EQE and σ(T) measurements.
4：Experimental Procedures and Operational Workflow:
After fabrication, J-V measurements and thermal annealing cycles were conducted, with annealing temperatures ranging from 100°C to 200°C.
5：Data Analysis Methods:
Photovoltaic parameters were analyzed, and temperature-dependent dark conductivity measurements were performed to understand the behavior of the solar cells.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
