研究目的
Investigating the use of low-frequency noise measurements as a non-destructive method for predicting the reliability and quality of 980 nm GaAs based semiconductor laser diodes.
研究成果
The study demonstrated that low-frequency noise measurements can serve as a sensitive indicator for assessing the quality and reliability of 980 nm GaAs based laser diodes. The frequency exponent γ of 1/f noise was found to range from 0.85 to 1.05, with variations observed based on the packaging method of the laser diodes. Future research aims to investigate the relationship between 1/f noise and parameters characterizing internal defects in laser diodes to establish quantitative models.
研究不足
The generation mechanism of 1/f noise is unclear, and existing experimental results lack perfect theoretical explanations. The study also suggests that different package modes exerted an influence on the quality and performance of laser diodes, indicating potential variability in results based on packaging.
