研究目的
To extend the performance of short-wave infrared (SWIR) detectors beyond the 1.7 μm cut-off wavelength of conventional InGaAs photodetectors by developing an InAs p-i-n photodetector on a GaAs substrate using InxAl1?xAs graded and AlAs buffer layers.
研究成果
The InAs p-i-n photodetector grown on a GaAs substrate using an InxAl1?xAs graded buffer layer demonstrated operation in the infrared range of 1.5–4 μm at room temperature, with a detectivity of 1.65 × 108 cm · Hz1/2 · W?1 at 3.3 μm. The study highlights the potential of this approach for extending the performance of SWIR detectors beyond the limitations of conventional InGaAs photodetectors.
研究不足
The study acknowledges the high cost of InAs wafers and the technical challenges in manufacturing InAs-based detectors. The lattice mismatch between GaAs and InAs leads to defects, which are mitigated but not entirely eliminated by the use of graded buffer layers.
1：Experimental Design and Method Selection:
The study employed molecular beam epitaxy (MBE) for growing InAs films on GaAs substrates with InxAl1?xAs graded and AlAs buffer layers to mitigate lattice mismatch issues.
2：Sample Selection and Data Sources:
InAs films were grown on semi-insulating (SI) GaAs (001) substrates.
3：List of Experimental Equipment and Materials:
A Riber compact 21E solid source MBE system was used for sample growth. Electrical properties were measured using an Ecopia HMS-3000 Hall Measurement System. Surface morphology was analyzed with a Park systems XE-100 AFM. Lattice spacing was measured with a Rigaku ATX-G XRD. Microstructure was studied using a TECNAI F20 G2 SuperTwin TEM.
4：Experimental Procedures and Operational Workflow:
The growth procedure involved degassing, deoxidizing the GaAs substrate, depositing a GaAs buffer layer, and then growing the InxAl1?xAs graded buffer and InAs layers under controlled temperatures and growth rates.
5：Data Analysis Methods:
Electrical properties, surface morphology, lattice spacing, and microstructure were analyzed to evaluate the quality of the InAs films and the performance of the photodetector.
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