研究目的
Improving the performance and self-power quality of GaN-based symmetric Metal-Semiconductor-Metal (MSM) Ultraviolet (UV) Photodetectors (PDs) by using phenol-functionalized porphyrin organic molecules.
研究成果
The insertion of a layer of organic molecules between the metal and semiconductor at the metal-semiconductor interface significantly improved the performance of GaN-based self-powered symmetric MSM UV photodetectors. This approach led to a reduction in reverse bias dark current, an increase in PDCR, enhanced responsivity, and improved UV-to-Visible rejection ratio at 0V.
研究不足
The study focuses on the improvement of GaN-based MSM UV PDs using organic molecular surface modification. Potential limitations include the stability of the organic molecular layer under high-temperature conditions and the scalability of the fabrication process for industrial applications.
1：Experimental Design and Method Selection:
The study involved the adsorption of phenol-functionalized Zinc-metallated Tetra-Phenyl-Porphyrin (Zn-TPPOH) organic molecules on GaN epitaxial layers to fabricate Ni/Zn-TPPOH/GaN/Zn-TPPOH/Ni PD structures.
2：Sample Selection and Data Sources:
Unintentionally doped GaN epitaxial films grown on c-plane sapphire substrate using Metal-Organic Vapour Phase Epitaxy (MOVPE) technique were used.
3：List of Experimental Equipment and Materials:
Water contact angle meter (GBX Digidrop), Kelvin Probe Force Microscopy (KPFM from Bruker; Dimension Icon Microscope), thermal evaporation system, and standard photolithography and lift-off processes.
4：Experimental Procedures and Operational Workflow:
The samples were cleaned, molecularly modified, and then Schottky contacts were deposited. I-V measurements were performed under dark and UV illumination conditions.
5：Data Analysis Methods:
The performance of the PDs was evaluated based on dark current, photo-to-dark current ratio (PDCR), responsivity, and spectral selectivity.
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