研究目的
To address the device-to-device variation in highly scaled devices by investigating and optimizing the grain properties of 12-nm-thick HZO films through altering the ALD cycle ratio of HfO2 and ZrO2 at a constant Zr concentration.
研究成果
The grain properties of 12-nm-thick HZO films can be optimized by adjusting the ALD cycle ratio of HfO2 and ZrO2, leading to improved ferroelectric properties and reduced device-to-device variation. The 5/5 ALD cycle ratio yields the best results in terms of remanent polarization and grain size distribution.
研究不足
The study focuses on 12-nm-thick HZO films and the effects of ALD cycle ratios on grain properties. The potential impact of other deposition parameters or film thicknesses is not explored.
1：Experimental Design and Method Selection:
The study involves altering the ALD cycle ratio of HfO2 and ZrO2 to investigate and optimize the grain properties of HZO films.
2：Sample Selection and Data Sources:
12-nm-thick HZO films with different ALD cycle ratios (1/1, 5/5, 10/10, and 15/15) were used.
3：List of Experimental Equipment and Materials:
Savannah ALD system, TDMAHf and TEMAZr precursors, H2O oxidizer, TiN and W electrodes, Radiant Technologies Precision Workstation (RT66A), Agilent B1500A semiconductor parameter analyzer, GIXRD, TEM, EDX, SEM.
4：Experimental Procedures and Operational Workflow:
Fabrication of MFM capacitors, deposition of HZO films with varying ALD cycle ratios, post-metallization annealing, and characterization of electrical and structural properties.
5：Data Analysis Methods:
Analysis of ferroelectric characteristics, grain size distribution, and structural properties using various characterization tools.
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