研究目的
To present a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs).
研究成果
The presented physics-based compact modeling approach accurately describes the impact of TID and aging effects on MOS devices and ICs, providing a useful tool for circuit design and reliability analysis in radiation environments.
研究不足
The modeling approach may require further validation for different MOS technologies and under varying radiation conditions.
1：Experimental Design and Method Selection:
The approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps.
2：Sample Selection and Data Sources:
The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS devices.
3：List of Experimental Equipment and Materials:
TCAD simulations and experimental I-V characteristics from irradiated devices are used for verification.
4：Experimental Procedures and Operational Workflow:
The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices.
5：Data Analysis Methods:
The impact of radiation and stress-induced defects on the I-V characteristics of MOSFETs is analyzed.
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