1：Experimental Design and Method Selection:

The study utilized a simple solution-based process for depositing Li doped NiOx thin films with preferential crystal growth along the (111) plane. Mott-Schottky analysis was used to study the hole carrier concentration.

2：Sample Selection and Data Sources:

Patterned indium tin oxide (ITO) glass substrates were used. The perovskite precursor solution was prepared by dissolving CH3NH3I:PbI2 in anhydrous N,N-dimethylformamide (DMF).

3：List of Experimental Equipment and Materials:

Atomic force microscopy (AFM), field-emission electron microscope (TESCAN, Mira 3-XMU), grazing incidence X-ray diffraction (GIXRD), UV-Vis absorption spectrophotometer, steady-state photoluminescence (PL) system, Electrochemical Impedance Spectroscopy (EIS 26H, iRA SOL), Keithley 2400 source meter unit, solar simulator (Newport, model 91160).

4：0). Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: The substrates were cleaned and treated with UV Ozone. The NiOx and Li:NiOx layers were spin-coated and annealed. The perovskite layer was spin-coated and annealed. A thin PCBM layer was deposited, and a Ag layer was thermally evaporated.

5：Data Analysis Methods:

The morphology and crystallographic properties were characterized using AFM, SEM, and GIXRD. The optical properties were measured using UV-Vis and PL. The electrical properties were analyzed using Mott-Schottky analysis and J-V measurements.