研究目的
To report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation, achieving high gain without significant tunneling current and low surface leakage current.
研究成果
Planar InAs APDs fabricated using Be ion implantation showed low surface leakage and achieved a high gain of 330 at ?26 V at 200 K. The planar fabrication process allowed for good control of surface conditions and low background doping, making these APDs comparable to state-of-the-art HgCdTe APDs.
研究不足
Surface leakage was significant at low temperatures or in small devices, and the source of background doping was not determined.
1：Experimental Design and Method Selection:
Fabrication of InAs planar APDs using Be ion implantation with a focus on achieving low background doping and large depletion widths.
2：Sample Selection and Data Sources:
InAs was grown using MOVPE with specific doping and thickness parameters.
3：List of Experimental Equipment and Materials:
MOVPE for growth, Be ion implantation for doping, PECVD for SiO2 deposition, and SIMS for doping concentration measurement.
4：Experimental Procedures and Operational Workflow:
Detailed steps include implantation, annealing, passivation, and contact deposition.
5：Data Analysis Methods:
C-V measurements for depletion width analysis, I-V characteristics for dark current and gain measurements.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
