研究目的
To explore the possibility that the device can be applied to integrated thin film circuit and operate well in the application, the n-type only inverters are fabricated using VO controlled thin film transistors (TFTs).
研究成果
The study successfully demonstrated the fabrication and analysis of a-SZTO TFTs with controlled electrical characteristics by adjusting the oxygen partial pressure during deposition. The n-type only inverters fabricated using these TFTs showed clear voltage transfer characteristics and the ability to control the transition region by simply changing the p(O2) ratio. The highest voltage gain achieved was about 26.554 V/V at 15 V of VDD, indicating the potential for these devices in integrated thin film circuits.
研究不足
The limitations include the technical constraints of controlling the oxygen partial pressure precisely during the deposition process and the potential need for optimization in the fabrication process to achieve more consistent electrical characteristics across different samples.
1：Experimental Design and Method Selection:
The a-SZTO thin films were deposited by radio frequency magnetron (RF) sputtering system to control the electrical characteristics by changing the oxygen partial pressure [p(O2)] ratio during the deposition.
2：Sample Selection and Data Sources:
The samples were prepared with varying oxygen partial pressure from 0 to 5 sccm by 1 step except 1 sccm during the deposition process.
3：List of Experimental Equipment and Materials:
Heavily doped p-type Si with SiO2 as a gate insulator, 1 wt% of Si doped a-SZTO (Zn:Sn ratio = 65:35 wt%), titanium and aluminium as the source and drain electrodes, and UV-aligner (MDA-400M) for photolithography.
4：Experimental Procedures and Operational Workflow:
The substrate was cleaned, a-SZTO was deposited, the channel layer was fabricated by wet-etched process, and the devices were annealed at 500 °C in air ambient for 2 hours. After that, the source and drain electrodes were deposited using lift-off process.
5：Data Analysis Methods:
The electrical characteristics such as Vth, μFE, and S.S. were analyzed using semiconductor parameter analyser (EL 423, ELECS Co.).
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