研究目的
Investigating the fabrication and performance of InAs planar avalanche photodiodes (APDs) using Be ion implantation, focusing on achieving high gain with low background doping and large depletion widths.
研究成果
The fabrication of planar InAs APDs using Be ion implantation achieved low background doping and large depletion widths, enabling high gain without significant tunneling current. The planar APDs showed low surface leakage and were comparable to state-of-the-art HgCdTe APDs in performance.
研究不足
The study was limited by the surface leakage current at low temperatures and in small devices, and the potential for defects caused by Be implantation affecting the minority carrier diffusion length.
1：Experimental Design and Method Selection:
The study involved the fabrication of InAs planar APDs using Be ion implantation, with a focus on achieving low background doping and large depletion widths. The APDs were characterized for their electrical and optical properties.
2：Sample Selection and Data Sources:
InAs was grown using metalorganic vapour phase epitaxy (MOVPE) with specific doping concentrations and thicknesses. The APDs were fabricated with varying diameters to study size effects.
3：List of Experimental Equipment and Materials:
Equipment included MOVPE for InAs growth, PECVD for SiO2 and SiN deposition, and SIMS for doping concentration measurements. Materials included InAs substrates, Be for ion implantation, and SU-8 for passivation.
4：Experimental Procedures and Operational Workflow:
The process involved InAs growth, Be ion implantation, annealing, passivation, and contact deposition. Electrical and optical characterizations were performed to evaluate APD performance.
5：Data Analysis Methods:
The study utilized current-voltage (I-V) characteristics, capacitance-voltage (C-V) measurements, and gain measurements to analyze the APDs' performance.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
