研究目的
To clarify the application of electron beam-induced current (EBIC) method for the morphological analysis and detection of local defects and impurities in semiconductor structures such as solar cells.
研究成果
The EBIC method has been able to reveal several undesirable defects and impurities which cannot be visible and detectable by SEM and other analytical methods. Many of these defects and impurities are not necessarily caused by improper handling but, for example, by the aging of a solar cell for which is natural to lose its e?ciency over time. However, such aging due to various in?uences can be minimized already during production following strict manufacturing processes.
研究不足
The study does not specify the exact origin of the electrically active impurity observed in the GaAs based solar cell, and it mentions that such aging due to various influences can be minimized already during production following strict manufacturing processes.
