研究目的
Investigating the effects of pulsed laser annealing on Cu(In,Ga)Se2 (CIGS) nanocrystal thin films for solar cell application.
研究成果
Photonic treatment of CIGS nanocrystal thin film absorber in ambient conditions using a pulsed nanosecond laser is optimized. Maximum power-conversion efficiency of 1.1% is obtained via nanosecond laser sintering of NaF doped CIGS nanocrystal thin films.
研究不足
The photovoltaic devices using PLA post-treatment of CIGS nanocrystals thin film has demonstrated relatively low performance compared to that of conventional and well established process.
1：Experimental Design and Method Selection
Pulsed laser annealing (PLA) of CIGS nanocrystal thin films was carried out at room temperature in ambient condition using a pulsed fiber laser (1064 nm source) with a pulse width of 220 ns and pulse repetition frequency of 60 kHz.
2：Sample Selection and Data Sources
CIGS nanocrystals were synthesized using a sonochemical route and spray casted on CdS/i:ZnO/Al:ZnO/Soda lime glass substrates.
3：List of Experimental Equipment and Materials
Pulsed fiber laser (Make: LPKF Solar Quipment, Germany, Model: Presto), X-ray diffraction (XRD) studies (Bruker D8), FESEM (ZEISS 500, Gemini, Denmark), UV–visible-NIR (Varian, Cary 5000), Impedance analyzer (Solartron SI 1260), Solar cell tester (94123A; Oriel Instruments).
4：Experimental Procedures and Operational Workflow
The laser power was varied to identify annealing and ablation regimes. PLA post-treatment was focused in the annealing regime with pulse energy varied from 0.66 J cm?2 to 5.32 J cm?2. Samples were also dipped in 0.1 M NaF solution before PLA to study the influence of Na doping.
5：Data Analysis Methods
XRD for crystallite size and lattice strain, FESEM for morphological studies, Mott Schottky analysis for carrier concentration, and IV characterization for photovoltaic performance.
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X-ray diffractometer
Bruker D8
Panalytical MRD Pro
Used for XRD studies of prepared samples.
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Pulsed fiber laser
Presto
LPKF Solar Quipment, Germany
Used for pulsed laser annealing of CIGS nanocrystal thin films.
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FESEM
ZEISS 500
Gemini, Denmark
Used for morphological and cross-section studies of various thin films.
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UV–visible-NIR spectrophotometer
Cary 5000
Varian
Used to measure optical properties such as absorbance, transmittance, and reflectance.
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Impedance analyzer
Solartron SI 1260
Used for Mott Schottky analysis.
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Solar cell tester
94123A
Oriel Instruments
Used for Current-Voltage (IV) characteristics measurement under dark and AM1.5 illumination.
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