研究目的
Demonstrating an on-wafer fabrication process for AlGaN-based UV-C laser diodes with etched mirrors and achieving lasing at room temperature under pulsed current injection.
研究成果
The on-wafer AlGaN-based UV-C LD fabrication method, utilizing vertical mirror facets formed by dry and wet etching and a uniformly coated DBR, successfully achieved lasing at room temperature under pulsed current injection. This approach is proposed as a viable low-cost, highly integrated UV-C LD production technology.
研究不足
The tilt angle of the mirror facets and the uniformity of the ALD-deposited DBR are critical for achieving lasing, requiring precise control. The re?ectivity provided by the DBR is essential for reducing the lasing threshold, indicating a dependency on the quality of the DBR deposition.
1：Experimental Design and Method Selection:
A combined process of dry and wet etching was employed to achieve smooth and vertical AlGaN (1(cid:2)100) facets, followed by uniform coating with a distributed Bragg reflector by atomic layer deposition.
2：Sample Selection and Data Sources:
A 2-in. epitaxial wafer of the UV-C LD structure on a single AlN substrate was used.
3：List of Experimental Equipment and Materials:
Inductive-coupled-plasma reactive-ion etching (ICP-RIE), tetramethylammonium hydride (TMAH) solution, atomic layer deposition (ALD) system, spectroscopic ellipsometry, ultraviolet-visible spectroscopy.
4：Experimental Procedures and Operational Workflow:
The process included RIE to expose the n-side cladding layer and form a ridge-geometry structure, wet etching to expose the (1(cid:2)100) facets, ALD deposition of DBR, and electrical characterization.
5：Data Analysis Methods:
The re?ectivity of the DBR was calculated using the transfer matrix method (TMM) and compared with measured spectra.
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