研究目的
Investigating the creation and properties of locally nanostructured graphene-based materials through high-energy Xe ion irradiation of partially fluorinated graphene films.
研究成果
The study demonstrated that high-energy ion irradiation can effectively nanostructure fluorinated graphene films, leading to the formation of graphene quantum dots with promising electronic properties. This approach offers potential applications in graphene-based electronics, including memristors.
研究不足
The study is limited by the specific conditions of ion irradiation and the properties of the fluorinated graphene films used. The potential for optimization in the irradiation process and film preparation methods is noted.
1：Experimental Design and Method Selection:
The study involved the irradiation of fluorinated graphene films with high-energy Xe ions to induce nanostructuring. The structural and electric properties of the films were analyzed using various techniques.
2：Sample Selection and Data Sources:
Fluorinated few-layer graphene suspensions were applied onto silicon substrates to create films. The films were then irradiated with Xe ions at different doses.
3：List of Experimental Equipment and Materials:
Equipment included a JEOLJSM-7800F scanning electron microscope, a Solver PRO NT-MDT scanning microscope for AFM images, a K-Alpha X-ray Photoelectron Spectrometer System for XPS measurements, and a JEOL-4000EX microscope for HRTEM.
4：Experimental Procedures and Operational Workflow:
The films were irradiated with Xe ions at room temperature in vacuum. The structural properties were studied using AFM, Raman spectroscopy, XPS, and SEM. Electrical properties were measured using current-voltage characteristics and capacitance-voltage measurements.
5：Data Analysis Methods:
The data were analyzed to understand the structural changes and electric properties of the irradiated films, including the formation of graphene quantum dots and their band gaps.
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JEOLJSM-7800F
7800F
JEOL
Scanning electron microscopy for imaging the surface of fluorinated graphene films.
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JEOL-4000EX
4000EX
JEOL
High-resolution transmission electron microscopy for studying the structural properties of the films.
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Keithley picoamperemeter
6485
Keithley
Measuring current-voltage characteristics of the films.
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Solver PRO NT-MDT
PRO
NT-MDT
Atomic force microscopy for measuring surface relief and thicknesses of samples.
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K-Alpha X-ray Photoelectron Spectrometer System
K-Alpha
XPS measurements for analyzing the chemical composition of the films.
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LCR-meter E4980AL
E4980AL
Measuring capacitance-voltage and conductance-voltage characteristics of the fabricated structures.
E4980A/E4980AL Precision LCR Meter
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