研究目的
To investigate the effects of oxygen partial pressure (PO2) during the sputtering deposition of Hf0.5Zr0.5O2 (HZO) thin films and the area ratio (SI/SF) of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) gate stacks on the polarization switching characteristics and synaptic operations of ferroelectric field-effect transistors (FeFETs).
研究成果
The study demonstrated that controlling the oxygen partial pressure during the sputtering deposition of HZO thin films and adjusting the SI/SF ratio of MFMIS gate stacks can effectively modulate the polarization switching characteristics and synaptic operations of FeFETs. These strategies provide useful guidelines for optimizing the design of ferroelectric synapse devices.
研究不足
The study is limited by the technical constraints of controlling oxygen partial pressure during the sputtering process and the design of MFMIS gate stacks. The aggressive device scaling required for higher integration density of synaptic device applications may also pose challenges.
1：Experimental Design and Method Selection:
The study involved the fabrication of MFM capacitors and p-channel FeFETs with Pt/HZO/TiN structures. The HZO thin films were deposited by rf sputtering with varying oxygen partial pressures (PO2). The effects of PO2 and SI/SF ratio on the ferroelectric properties and synaptic operations were investigated.
2：2). The effects of PO2 and SI/SF ratio on the ferroelectric properties and synaptic operations were investigated.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The samples included MFM capacitors and p-channel FeFETs fabricated on n-Si(100) substrates. The HZO thin films were prepared with PO2 conditions of 0, 0.5, 1.0, and 1.5%.
3：5, 0, and 5%.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment used included a ferroelectric tester (Precision LC, Radiant Technologies, Inc.), X-ray diffraction (XRD) system, X-ray photoelectron spectroscopy (XPS), semiconductor parameter analyzer (Keithley 4200A-SCS), digital oscilloscope (Tektronix, MDO3102), and pulse generator (HP 8110A). Materials included HZO thin films, TiN, Pt, and SiO
4：Experimental Procedures and Operational Workflow:
The HZO thin films were deposited by rf sputtering, followed by thermal treatment for crystallization. The MFM capacitors and FeFETs were fabricated and characterized for their ferroelectric and synaptic properties.
5：Data Analysis Methods:
The ferroelectric properties were analyzed using P–E hysteresis curves, and the synaptic operations were evaluated using excitatory and inhibitory postsynaptic currents (EPSC and IPSC), paired-pulse facilitation (PPF), and spike timing-dependent plasticity (STDP).
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