研究目的
Investigating the plasmonic Dicke effect in an InGaN/GaN multiple quantum well structure to understand the spatial range of effective SP coupling and optimize the QW period number for maximizing the SP coupling effect.
研究成果
The study demonstrates a variation trend in emission efficiency consistent with the plasmonic Dicke effect in InGaN/GaN multiple-QW structures. The optimized QW period number for maximizing the SP coupling effect is found to be 4-5. The results suggest that increasing the QW period number beyond this optimized number can still enhance overall emission intensity, especially in the green range, despite a decrease in IQE enhancement.
研究不足
The study is limited by the variations in intrinsic emission efficiencies of individual QWs due to differences in strain, indium incorporation conditions, and overgrowth thermal annealing effects. Additionally, the localized nature of LSP resonance and the difficulty in measuring individual emission efficiencies of different QWs complicate the analysis.
1：Experimental Design and Method Selection:
The study involves preparing four series of InGaN/GaN multiple-QW samples with different QW period numbers and single-QW samples with varying capping layer thicknesses. The samples are then coupled with surface Ag nanoparticles to induce localized surface plasmon (LSP) resonances.
2：Sample Selection and Data Sources:
The samples are divided into two groups of green-emitting QWs (GQWs) and blue-emitting QWs (BQWs), each with different QW period numbers and capping layer thicknesses.
3：List of Experimental Equipment and Materials:
The samples are prepared using metalorganic chemical vapor deposition on double-polished c-plane sapphire substrate. Ag nanoparticles are formed by depositing Ag followed by thermal annealing.
4：Experimental Procedures and Operational Workflow:
The emission efficiencies of the QW samples are evaluated through measurements of internal quantum efficiency (IQE) and time-resolved photoluminescence (TRPL).
5：Data Analysis Methods:
The IQE is evaluated by taking the ratio of spectrally integrated PL intensity at 300 K over that at 10 K. TRPL measurements provide the PL decay rate, indicating the decay rate of carrier density in the QW samples.
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