研究目的
To determine the phonon deformation potentials (PDPs) of carbon-doped silicon (Si:C) for evaluating anisotropic biaxial stress using water-immersion Raman spectroscopy and X-ray diffraction (XRD).
研究成果
The study successfully determined the PDPs of Si:C, showing a dependence on C concentration. Further research is needed to accurately derive the elastic compliance constants and alloy-disorder coefficient.
研究不足
The accuracy of the alloy-disorder coefficient and the assumption of linearity in the elastic compliance constant with respect to C concentration may affect the results.
1：Experimental Design and Method Selection:
Water-immersion Raman spectroscopy and XRD were used to measure Raman peak shifts and strain in Si:C.
2：Sample Selection and Data Sources:
Si:C films with varying C concentrations were grown on Si substrates by molecular beam epitaxy.
3：List of Experimental Equipment and Materials:
Water-immersion lens, Nd:YAG laser, spectroscope, pure water, Si:C samples.
4：Experimental Procedures and Operational Workflow:
Raman shifts were measured under LO and TO phonon modes; in-plane and out-of-plane strains were measured by XRD.
5：Data Analysis Methods:
The relationship between Raman shift and strain was analyzed to determine PDPs.
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