摘要： Poly (3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In the present work, GaN nanowires with diameters of 25–50 nm and two lengths (200 and 500 nm) have been grown using molecular beam epitaxy technique. Solar-grade monocrystalline silicon wafers were used as substrates for nanowire synthesis. GaN nanostructures were incorporated into P3HT:PCBM photoactive layer in order to facilitate charge transfer between P3HT:PCBM and Si. Samples with and without nanowires were compared. Addition of nanowires led to the improvement in photovoltaic performance. Open circuit voltage has risen by 72% and short circuit current density by 200%. Series resistance has decreased 50 times, and power conversion efficiency has risen 20.7 times. Additional maxima are found in photocurrent spectrum corresponding to carriers being generated near GaN absorption edge. Moreover, external quantum efficiency peaks near GaN absorption edge, indicating transfer channel via the formation of current P3HT/GaN/Si cascade heterojunction. Mechanism explaining source of abovementioned improvement is proposed.