研究目的
Investigating the effect of Ga introduction during the second stage of a coevaporation process of Cu(In,Ga)Se2 layers at low temperature on polyimide substrates to achieve high efficiency solar cells.
研究成果
Introducing Ga during the second stage of the coevaporation process modifies the compositional profiles in the absorber layer, increases the band gap energy, and results in a smoother Ga grading. This approach reduces the formation of binary compounds and Ga accumulation at the back interface, potentially leading to higher efficiency solar cells.
研究不足
The study is limited to low-temperature deposition processes on polyimide substrates, and the impact of Ga introduction on the growth model of CIGS requires further investigation.
1：Experimental Design and Method Selection:
The study employs a modified three-stage coevaporation process for CIGS deposition on polyimide substrates, introducing Ga flux during the second stage.
2：Sample Selection and Data Sources:
CIGS layers are deposited on DC sputtered Mo layers on polyimide substrates.
3：List of Experimental Equipment and Materials:
Includes a coevaporation system, X-ray fluorescence (XRF) for composition determination, glow discharge optical emission spectrometry (GD-OES) for in-depth composition profiles, Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) for surface chemical analyses.
4：Experimental Procedures and Operational Workflow:
The process involves deposition at low temperature, followed by characterization of the layers at the end of the second stage.
5：Data Analysis Methods:
Compositional profiles are analyzed using GD-OES, and surface properties are examined using Raman and XPS.
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