研究目的
Investigating the structure and preferred orientation of C8-BTBT layers formed by vacuum thermal evaporation on various single-crystal inorganic substrates.
研究成果
The (001) out-of-plane orientation with a similar in-plane orientation was obtained for C8-BTBT layers irrespective of the substrate material and orientation, governed by π–π-stacking-induced molecular ordering. The degree of orientation was reflected by the grain structure related to the substrate material.
研究不足
The study is limited by the instrumental limitation in detecting the (001) diffracted X-ray peak at approximately 3°. The carrier concentration and mobility could not be estimated by the technique used in this study.
1：Experimental Design and Method Selection:
C8-BTBT was deposited on various substrates by vacuum thermal evaporation. Structural characterizations were performed using X-ray diffraction analysis and AFM observation.
2：Sample Selection and Data Sources:
Quartz glass, A-, C-, and R-single-crystal Al2O3 (sapphire), and (100)- and (111)-single-crystal MgO substrates were used.
3：List of Experimental Equipment and Materials:
Vacuum thermal evaporation system (ULVAC VTS-350ERH/M), quartz crystal deposition control system (ULVAC CRTM-6000G), X-ray diffractometer (Rigaku RINT 2500), 2D imaging plate detector (Rigaku RINT-Rapid II), AFM (Shimadzu SPM-9700-Kai), Hall effect measurement system (Toyo Technica Resitest 8310).
4：0).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Substrates were annealed before deposition. C8-BTBT layers were deposited at a substrate temperature of 343 K. Thickness and deposition rate were controlled. XRD and AFM measurements were conducted post-deposition.
5：Data Analysis Methods:
XRD patterns were analyzed using Bragg’s equation. AFM images were analyzed for surface morphology and roughness.
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