研究目的
Investigating the effect of a monolayer graphene surface electrode on the angle dispersions of output electrons from a nanocrystalline silicon (nc-Si) quasiballistic electron emitter.
研究成果
The use of a monolayer graphene surface electrode significantly reduces the angle dispersion of output electrons from an nc-Si quasiballistic electron emitter, enhances emission efficiency, and suppresses electron energy dispersion. These effects are attributed to the high transparency of monolayer graphene for quasiballistic electrons. The findings suggest that monolayer graphene can effectively utilize the intrinsic multi-tunneling cascade mode through nc-Si dots, offering potential improvements in electron emission technologies.
研究不足
The study is limited to the specific configuration of the nc-Si emitter with a monolayer graphene surface electrode and does not explore other potential materials or configurations that might also reduce angle dispersion. Additionally, the temperature dependence was only studied at room temperature and 150K, leaving a gap in understanding at other temperatures.
1：Experimental Design and Method Selection:
The experiment was designed to compare the emission angle distribution and energy dispersion of electrons from an nc-Si emitter with a monolayer graphene surface electrode versus a conventional thin Au/Ti film surface electrode. The theoretical basis involves the quasiballistic transport of electrons through nc-Si dots and the high transparency of monolayer graphene for these electrons.
2：Sample Selection and Data Sources:
The nc-Si electron emitter was composed of a monolayer graphene, an nc-Si layer, and a single-crystalline Si substrate. The monolayer graphene was deposited on a Cu layer by conventional LPCVD and transferred onto the nc-Si layer.
3：List of Experimental Equipment and Materials:
The setup included an nc-Si electron emitter with either a monolayer graphene or a thin Au/Ti film surface electrode, and equipment for measuring the angular dependence of the emission electron energy distribution.
4：Experimental Procedures and Operational Workflow:
Under a positive bias voltage, quasiballistic hot electrons generated in the nc-Si layer were emitted through the surface electrode. The angular dependence of the emission electron energy distribution was measured, and the emitted electron energy dispersion and emission angle dispersion were evaluated.
5：Data Analysis Methods:
The energy and angle resolutions of the system were 27.1 meV and ±1°, respectively. The data were analyzed to compare the emission angle distributions and energy dispersions between the two types of surface electrodes.
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