研究目的
Investigating the band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 for heterostructure field effect transistors.
研究成果
The band alignment at SiO2/β-(Al0.14Ga0.86)2O3 heterojunctions was found to be a nested gap (type I) band offset with a valence band offset of 1.60 eV and a conduction band offset of 2.10 eV. These offsets provide sufficient hole confinement and excellent restriction to electron transport, making SiO2 a suitable gate dielectric for (Al0.14Ga0.86)2O3-based heterostructure transistors.
研究不足
The study focuses on a specific composition of (Al0.14Ga0.86)2O3 and may not be directly applicable to other compositions. The band alignment could be influenced by interface preparation methods and contamination.
1：Experimental Design and Method Selection:
The study employed x-ray photoelectron spectroscopy (XPS) to measure the valence band offsets and reflection electron energy loss spectroscopy (REELS) to determine the bandgap of the SiO
2：Sample Selection and Data Sources:
The SiO2 was deposited by ALD on (Al
3：14Ga86)2O3/Ga2O3 structures and quartz substrates. The (Al14Ga86)2O3 layers were grown by molecular beam epitaxy. List of Experimental Equipment and Materials:
ULVAC PHI XPS with an aluminum x-ray source, Cambridge Nano Fiji 200 ALD system.
4：Experimental Procedures and Operational Workflow:
The SiO2 layers were deposited at 200 °C using precursors of tris (dimethylamino) silane and O
5：After ALD deposition, the samples were transferred directly to the XPS system. Data Analysis Methods:
The valence band maximum was determined by linearly fitting the leading edge of the valence band and the flat energy distribution from the XPS measurements.
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