1：Experimental Design and Method Selection:

The study involved repeatedly irradiating a back-gated graphene transistor with argon ions at 90 eV and measuring its low-frequency noise and channel conductivity after each irradiation. The mobility fluctuation model was used to analyze the observed reduction of the noise amplitude.

2：Sample Selection and Data Sources:

Monolayer graphene grown on a copper foil by chemical vapor deposition was used. The graphene was transferred onto a p+ Si substrate covered with 285 nm SiO2 and then patterned into small islands. h-BN flakes were mechanically exfoliated and used as a support substrate.

3：List of Experimental Equipment and Materials:

A four-point back-gated field-effect transistor (FET) was fabricated. Raman spectroscopy was used to quantify the defect density after each irradiation.

4：Experimental Procedures and Operational Workflow:

The graphene device was bombarded with low-energy Ar ions at 90 eV to create vacancy defects. Electrical characteristics, including intrinsic channel conductance and low-frequency noise, were measured after each irradiation.

5：Data Analysis Methods:

The noise amplitude was calculated from the measured spectral noise density using the mobility fluctuation model. The carrier transport properties were analyzed using a combination of four-point measurements and modeling of the intrinsic channel conductivity.