研究目的
Investigating the formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1?xSnx structure.
研究成果
The study achieved an ultra-low contact resistivity as low as 10?9 Ω cm2 with the Ni(Ge1?xSnx)/Sb-doped Ge0.935Sn0.065 sample, demonstrating the potential for improving the performance of n-type Ge and Ge1?xSnx MOSFET devices. However, the reason for the discrepancy between theoretical and experimental results needs further investigation.
研究不足
The study notes a discrepancy between theoretical calculation and experimental results for contact resistivity, which has not been clarified yet. The influence of vertical voltage drop in semiconductor layer for samples with very low contact resistivity is also a concern.
1：Experimental Design and Method Selection:
The study involved the formation of Ni(Ge1?xSnx)/n+-Ge1?xSnx contacts with Sb- and P-doped Ge1?xSnx epitaxial layers using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD) methods.
2：Sample Selection and Data Sources:
Samples were prepared on p-Ge(001) wafer and virtual Ge (v-Ge) substrates. The electron concentrations in Ge and Ge1?xSnx layers were estimated by micro four-point probe (M4PP) method.
3：List of Experimental Equipment and Materials:
Equipment included MBE and MOCVD chambers, Knudsen cells for Ge, Sn, and Sb evaporation, and rapid thermal annealing system. Materials included Sb- and P-doped Ge1?xSnx epitaxial layers.
4：Experimental Procedures and Operational Workflow:
A 10 nm thick Ni layer was deposited on Sb- and P-doped epitaxial layers, annealed at 350 °C for 30 s in pure N2 ambient, and Al electrode was deposited and patterned for evaluating contact resistivity with the circular transmission line model (C-TLM).
5：Data Analysis Methods:
The contact resistivity was calculated from estimated sheet resistance and transfer length using the C-TLM model.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
