研究目的
Investigating the effect of Potassium, Rubidium, and Cesium post deposition treatment on wide bandgap Cu(In,Ga)Se2 absorbers to improve the efficiency and open-circuit-voltage of solar cells.
研究成果
The post deposition treatment of heavier alkalis improves the electronic parameters of CIGSe solar cells, with RbF-PDT being the most effective for reducing the VOC-deficit. However, the study confirms that wide gap CIGSe solar cells are still limited by recombination at the interface, even after heavy alkali treatment.
研究不足
The study shows that despite the improvement in VOC, wide gap CIGSe devices remain limited by recombination at the interface. The mechanisms of alkali PDTs and their effects on interface recombination in high-Ga content CIGSe are not fully understood.
1：Experimental Design and Method Selection:
The study involved the preparation of CIGSe absorbers by co-evaporation in a multistage process, followed by alkali post deposition treatment under Se atmosphere.
2：Sample Selection and Data Sources:
CIGSe solar cells were produced on Mo coated soda-lime glass substrate with varying Ga concentration.
3：List of Experimental Equipment and Materials:
Energy Dispersive X-ray spectroscopy for composition measurement, solar simulator for J-V curves, monochromator for EQE measurement.
4：Experimental Procedures and Operational Workflow:
After deposition, substrates were cooled and treated with KF, RbF, or CsF. Chemical bath deposition and sputtering were performed to complete solar cells.
5：Data Analysis Methods:
Activation energy was extracted from temperature dependent J-V curves, and VOC transients were analyzed to identify dominant recombination paths.
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