研究目的
Investigating the fabrication and performance of GaN metal-oxide-semiconductor devices with ZrO2 as dielectric layers, focusing on the effects of different oxidizers (H2O and O3) and the innovation of composite electrodes.
研究成果
High-quality AZO/AgNWs/AZO/ZrO2/p-GaN MOS devices were successfully prepared by ALD, showing a minimum flat band voltage of ?1.45 V and a favorable interface trap density of 1.4 × 1011 cm?2. The use of O3 as the oxidizer resulted in better device performance compared to H2O.
研究不足
The study focuses on the fabrication and initial characterization of MOS devices with ZrO2 dielectrics. Further optimization and long-term reliability testing are needed for practical applications.
1：Experimental Design and Method Selection:
Fabrication of p-type GaN MOS devices with ZrO2 dielectrics using atomic layer deposition (ALD) with H2O and O3 as oxidizers.
2：Sample Selection and Data Sources:
Mg-doped p-type GaN thin films grown on sapphire substrates.
3：List of Experimental Equipment and Materials:
ALD chamber (Beneq TFS-200), spectroscopic ellipsometer, AFM, Hall-effect measurement system, semiconductor analyzer, XPS, SEM.
4：Experimental Procedures and Operational Workflow:
Cleaning of p-GaN substrates, deposition of ZrO2 thin films, fabrication of Cr/Au and AZO/AgNWs/AZO electrodes, characterization of surface morphologies, electrical properties, and chemical bonding states.
5：Data Analysis Methods:
Analysis of C-V characteristics, XPS spectra, and SEM images to evaluate device performance.
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spectroscopic ellipsometer
J. A. Woollam alpha-SE
J. A. Woollam
Measurement of film thickness
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AFM
SPM-9500 J3
Shimadzu
Analysis of surface morphologies
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Hall-effect measurement system
Lakeshore 7700
Lakeshore
Determination of carrier concentration
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semiconductor analyzer
Keithley 4200
Keithley
Characterization of capacitance versus voltage
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XPS
ESCLAB 250Xi
Thermo Fisher Scientific
Examination of chemical bonding states
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SEM
FEI Versa 3D Lov
FEI
Characterization of surface images
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ALD chamber
Beneq TFS-200
Beneq
Deposition of ZrO2 thin films
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