研究目的
To study the surface electrical properties of Al doped ZnO nanorods by STM for the fabrication of nanodevices.
研究成果
The study successfully characterized the structural and electrical properties of pure and Al:ZnO NRs. The XRD and SEM confirmed the hexagonal phase and uniform growth of NRs. STM measurements revealed the n-type behavior and bandgap alteration with Al doping, which is crucial for nanodevice fabrication.
研究不足
The study is limited to the characterization of Al:ZnO NRs grown by the hydrothermal method and does not compare with other growth methods. The effect of higher Al concentrations on the crystalline structure and electrical properties needs further investigation.
1：Experimental Design and Method Selection:
The study used the hydrothermal method for the growth of pure and Al:ZnO NRs on silicon substrates. The structural and electrical properties were characterized by SEM, XRD, and STM.
2：Sample Selection and Data Sources:
Pure and Al:ZnO NRs were grown on p-type silicon wafers. The Al composition was kept at 2% and 5%.
3：5%. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: SEM (HITACHI S-4800, Japan), XRD (PAN Analytical X’PERT PRO XRD system with Cu Kα radiation), STM (nanoREV Ambient Air STM system from Quazar Technologies Pvt. Ltd.), and precursors like zinc acetate dihydrate, ethyl alcohol, zinc nitrate hexahydrate, hexa-methylene-tetramine, and aluminum nitrate nonahydrate.
4：Experimental Procedures and Operational Workflow:
The NRs were grown in two steps: seed layer deposition and main growth. The electrical characterization was done by STM with a Pt/Ir tip, measuring I-V characteristics and local electron spectroscopy.
5：Data Analysis Methods:
The bandgap and n-type behavior were confirmed from the dI/dV – V characteristics.
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